Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H-SiC

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage173en_US
dc.citation.issueNumber1en_US
dc.citation.spage168en_US
dc.citation.volumeNumber315en_US
dc.contributor.authorCaban, P.en_US
dc.contributor.authorStrupinski, W.en_US
dc.contributor.authorSzmidt, J.en_US
dc.contributor.authorWojcik, M.en_US
dc.contributor.authorGaca, J.en_US
dc.contributor.authorKelekci, O.en_US
dc.contributor.authorCaliskan, D.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T09:54:50Z
dc.date.available2016-02-08T09:54:50Z
dc.date.issued2010-09-25en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractThe influence of growth pressure on the coalescence thickness and the crystal quality of GaN deposited on 4HSiC by low pressure metalorganic vapor phase epitaxy was studied. It was shown that growth pressure has an impact on the surface roughness of epilayers and their crystal quality. GaN coalescence thicknesses were determined for the investigated growth pressures. The GaN layers were characterized by AFM and HRXRD measurements. HEMT structures were also fabricated and characterized. Among the growth pressures studied, 50, 125 and 200 mbar, 200 mbar was found to be most suitable for GaN/SiC epitaxy.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T09:54:50Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2011en
dc.identifier.doi10.1016/j.jcrysgro.2010.09.058en_US
dc.identifier.issn0022-0248
dc.identifier.urihttp://hdl.handle.net/11693/22052
dc.language.isoEnglishen_US
dc.publisherElsevieren_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.jcrysgro.2010.09.058en_US
dc.source.titleJournal of Crystal Growthen_US
dc.subjectA1. High resolution X-ray diffractionen_US
dc.subjectA3. Low pressure metalorganic vapor phase epitaxyen_US
dc.subjectB1. Nitridesen_US
dc.subjectB3. High electron mobility transistorsen_US
dc.subjectA1. Defectsen_US
dc.subjectA1. Nucleationen_US
dc.subjectB1. Nitridesen_US
dc.subjectHigh resolution X-ray diffractionen_US
dc.subjectLow-pressure metalorganic vapor phase epitaxyen_US
dc.subjectCoalescenceen_US
dc.subjectDefectsen_US
dc.subjectDiffractionen_US
dc.subjectElectron mobilityen_US
dc.subjectEpitaxial growthen_US
dc.subjectGallium alloysen_US
dc.subjectGallium nitrideen_US
dc.subjectMetallorganic vapor phase epitaxyen_US
dc.subjectPressure effectsen_US
dc.subjectSilicon carbideen_US
dc.subjectSuperconducting filmsen_US
dc.subjectSurface roughnessen_US
dc.subjectVaporsen_US
dc.titleEffect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H-SiCen_US
dc.typeArticleen_US

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