Microwave whispering-gallery-mode photoconductivity measurement of recombination lifetime in silicon
Date
2019
Editor(s)
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Instructor
Source Title
Advanced Electromagnetics
Print ISSN
2119-0275
Electronic ISSN
Publisher
Advanced Electromagnetics
Volume
8
Issue
2
Pages
101 - 107
Language
English
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Journal Title
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Abstract
We present a whispering-gallery-mode resonance-enhanced microwave-detected photoconductivity-decay method for contactless measurement of recombination lifetime in highresistivity semiconductor layers. We applied the method to undoped Silicon wafers of high resistivity at 5 and 30 kOhm*cm and measured the conductivity relaxation times of 10 and 14 microseconds, respectively. In wafers being considered, they are supposed to be defined by the electron-hole diffusion from the bulk to the wafer surfaces.