Realistic channel temperature simulation of AlGaN/GaN high electron mobility transistors

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buir.contributor.authorOdabaşı, Oğuz
buir.contributor.authorBütün, Bayram
buir.contributor.authorEkmel, Özbay
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage90en_US
dc.citation.spage87en_US
dc.contributor.authorOdabaşı, Oğuzen_US
dc.contributor.authorBütün, Bayramen_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.coverage.spatialPrague, Czech Republicen_US
dc.date.accessioned2020-01-24T06:33:25Z
dc.date.available2020-01-24T06:33:25Z
dc.date.issued2019
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.descriptionDate of Conference: 13-15 May 2019en_US
dc.descriptionConference name: European Microwave Conference in Central Europe (EuMCE), Proceedings of the 1st European Microwave Conference in Central Europeen_US
dc.description.abstractIn this work, the realistic channel temperature of AlGaN/GaN High Electron Mobility Transistors (HEMTs) is investigated by using 2D electrothermal and Finite Element Method (FEM) thermal simulations. By using a special method to map the position dependent heating in a device, more accurate results in channel temperature are achieved compared to the conventional FEM methods. With this method, larger device areas can be simulated more accurately with less complexity.en_US
dc.identifier.isbn9782874870675
dc.identifier.urihttp://hdl.handle.net/11693/52792
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.source.title2019 European Microwave Conference in Central Europe (EuMCE)en_US
dc.subjectAlGaN/GaNen_US
dc.subjectHigh-Electron-Mobility-Transistors (HEMT)en_US
dc.subjectReliabilityen_US
dc.subjectSemiconductor device thermal factorsen_US
dc.titleRealistic channel temperature simulation of AlGaN/GaN high electron mobility transistorsen_US
dc.typeConference Paperen_US

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