Realistic channel temperature simulation of AlGaN/GaN high electron mobility transistors
Date
2019
Authors
Editor(s)
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
Source Title
2019 European Microwave Conference in Central Europe (EuMCE)
Print ISSN
Electronic ISSN
Publisher
IEEE
Volume
Issue
Pages
87 - 90
Language
English
Type
Journal Title
Journal ISSN
Volume Title
Series
Abstract
In this work, the realistic channel temperature of AlGaN/GaN High Electron Mobility Transistors (HEMTs) is investigated by using 2D electrothermal and Finite Element Method (FEM) thermal simulations. By using a special method to map the position dependent heating in a device, more accurate results in channel temperature are achieved compared to the conventional FEM methods. With this method, larger device areas can be simulated more accurately with less complexity.
Course
Other identifiers
Book Title
Keywords
AlGaN/GaN, High-Electron-Mobility-Transistors (HEMT), Reliability, Semiconductor device thermal factors