Metal-semiconductor-metal UV photodetector based on Ga doped ZnO/graphene interface
buir.contributor.author | Okyay, Ali Kemal | |
dc.citation.epage | 40 | en_US |
dc.citation.spage | 37 | en_US |
dc.citation.volumeNumber | 224 | en_US |
dc.contributor.author | Kumar, M. | en_US |
dc.contributor.author | Noh, Y. | en_US |
dc.contributor.author | Polat, K. | en_US |
dc.contributor.author | Okyay, Ali Kemal | en_US |
dc.contributor.author | Lee, D. | en_US |
dc.date.accessioned | 2016-02-08T10:58:02Z | |
dc.date.available | 2016-02-08T10:58:02Z | |
dc.date.issued | 2015 | en_US |
dc.department | Institute of Materials Science and Nanotechnology (UNAM) | en_US |
dc.description.abstract | Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) based on Ga doped ZnO (ZnO:Ga)/graphene is presented in this work. A low dark current of 8.68 nA was demonstrated at a bias of 1 V and a large photo to dark contrast ratio of more than four orders of magnitude was observed. MSM PD exhibited a room temperature responsivity of 48.37 A/W at wavelength of 350 nm and UV-to-visible rejection ratio of about three orders of magnitude. A large photo-to-dark contrast and UV-to-visible rejection ratio suggests the enhancement in the PD performance which is attributed to the existence of a surface plasmon effect at the interface of the ZnO:Ga and underlying graphene layer. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T10:58:02Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2015 | en |
dc.identifier.doi | 10.1016/j.ssc.2015.10.007 | en_US |
dc.identifier.issn | 0038-1098 | |
dc.identifier.uri | http://hdl.handle.net/11693/26308 | |
dc.language.iso | English | en_US |
dc.publisher | Pergamon Press | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1016/j.ssc.2015.10.007 | en_US |
dc.source.title | Solid State Communications | en_US |
dc.subject | A. Ga doped ZnO | en_US |
dc.subject | A. Graphene | en_US |
dc.subject | C. Metal-semiconductor-metal | en_US |
dc.subject | D. Surface plasmon | en_US |
dc.subject | Photodetectors | en_US |
dc.subject | Photons | en_US |
dc.subject | Plasmons | en_US |
dc.subject | Zinc oxide | en_US |
dc.subject | Fabrication and characterizations | en_US |
dc.subject | Metal-semiconductor-metal uv photodetectors | en_US |
dc.subject | Surface plasmon effects | en_US |
dc.subject | Surface plasmons | en_US |
dc.subject | Temperature responsivity | en_US |
dc.subject | Three orders of magnitude | en_US |
dc.subject | Metals | en_US |
dc.title | Metal-semiconductor-metal UV photodetector based on Ga doped ZnO/graphene interface | en_US |
dc.type | Article | en_US |
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