Metal-semiconductor-metal UV photodetector based on Ga doped ZnO/graphene interface
Date
2015
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Source Title
Solid State Communications
Print ISSN
0038-1098
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Publisher
Pergamon Press
Volume
224
Issue
Pages
37 - 40
Language
English
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Abstract
Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) based on Ga doped ZnO (ZnO:Ga)/graphene is presented in this work. A low dark current of 8.68 nA was demonstrated at a bias of 1 V and a large photo to dark contrast ratio of more than four orders of magnitude was observed. MSM PD exhibited a room temperature responsivity of 48.37 A/W at wavelength of 350 nm and UV-to-visible rejection ratio of about three orders of magnitude. A large photo-to-dark contrast and UV-to-visible rejection ratio suggests the enhancement in the PD performance which is attributed to the existence of a surface plasmon effect at the interface of the ZnO:Ga and underlying graphene layer.
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Keywords
A. Ga doped ZnO , A. Graphene , C. Metal-semiconductor-metal , D. Surface plasmon , Photodetectors , Photons , Plasmons , Zinc oxide , Fabrication and characterizations , Metal-semiconductor-metal uv photodetectors , Surface plasmon effects , Surface plasmons , Temperature responsivity , Three orders of magnitude , Metals