Normally-off p-GaN gate InAlN/GaN HEMTs grown on silicon substrates

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buir.contributor.authorGülseren, Melisa Ekin
buir.contributor.authorBozok, Berkay
buir.contributor.authorKurt, Gökhan
buir.contributor.authorKayal, Ömer Ahmet
buir.contributor.authorMustafa, Mustafa
buir.contributor.authorUral, Sertaç
buir.contributor.authorBütün, Bayram
buir.contributor.authorEkmel, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage7en_US
dc.citation.spage1en_US
dc.citation.volumeNumber10918en_US
dc.contributor.authorGülseren, Melisa Ekinen_US
dc.contributor.authorBozok, Berkayen_US
dc.contributor.authorKurt, Gökhanen_US
dc.contributor.authorKayal, Ömer Ahmeten_US
dc.contributor.authorÖztürk, Mustafaen_US
dc.contributor.authorUral, Sertaçen_US
dc.contributor.authorBütün, Bayramen_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.coverage.spatialSan Francisco, California, United Statesen_US
dc.date.accessioned2020-01-30T12:54:55Z
dc.date.available2020-01-30T12:54:55Z
dc.date.issued2019-02
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.descriptionDate of Conference: 2-7 February 2019en_US
dc.descriptionConference name: SPIE OPTO, 2019en_US
dc.description.abstractA normally-off InAlN/GaN high electron mobility transistor (HEMT) on Si substrate with a p-GaN gate is reported. Devices are fabricated on two different epitaxial structures, one containing a high resistive GaN buffer layer and one containing an AlGaN back-barrier, and the threshold voltage, drain current density, and buffer leakage current are compared. With the epitaxial structure containing a high resistive GaN layer, normally-off operation with a threshold voltage of +0.5 V is achieved. The threshold voltage is further increased to +2 V with the AlGaN back-barrier, and the buffer leakage current was improved by over an order of magnitude.en_US
dc.description.provenanceSubmitted by Evrim Ergin (eergin@bilkent.edu.tr) on 2020-01-30T12:54:55Z No. of bitstreams: 1 Normally-off_p-GaN_gate_InAlN-GaN_HEMTs_grown_on_silicon_substrates.pdf: 1666482 bytes, checksum: 14cf720984392d82cdfe334f5db167b5 (MD5)en
dc.description.provenanceMade available in DSpace on 2020-01-30T12:54:55Z (GMT). No. of bitstreams: 1 Normally-off_p-GaN_gate_InAlN-GaN_HEMTs_grown_on_silicon_substrates.pdf: 1666482 bytes, checksum: 14cf720984392d82cdfe334f5db167b5 (MD5) Previous issue date: 2019-02en
dc.description.sponsorshipThe Society of Photo-Optical Instrumentation Engineers (SPIE)en_US
dc.identifier.doi10.1117/12.2507398en_US
dc.identifier.issn0277-786X
dc.identifier.urihttp://hdl.handle.net/11693/52938
dc.language.isoEnglishen_US
dc.publisherSPIEen_US
dc.relation.isversionofhttps://doi.org/10.1117/12.2507398en_US
dc.source.titleProceedings Gallium Nitride Materials and Devices XIVen_US
dc.subjectBack-barrieren_US
dc.subjectHigh-electron-mobility transistors (HEMTs)en_US
dc.subjectInAlN, normally-offen_US
dc.subjectp-GaN gateen_US
dc.subjectBuffer leakageen_US
dc.subjectGaNen_US
dc.titleNormally-off p-GaN gate InAlN/GaN HEMTs grown on silicon substratesen_US
dc.typeConference Paperen_US

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