Electronic structure of a Si delta-layer embedded in Ge(001)

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Electronic structure of a Si δ-layer embedded in Ge(001).pdf (2.56 MB)

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1991

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Abstract

Using the Green function formalism with layer orbitals we studied the electronic structure of a Si δ-layer in germanium. We found two-dimensional parabolic subbands near the band edges. This approach is extended to treat the electronic structure of a single quantum well without invoking the periodically repeating models.

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Semiconductor Science and Technology

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Institute of Physics Publishing

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Green Function, Quantum Wells, Quantum Theory, Semiconducting Germanium, Semiconducting Silicon, Semiconducting Films

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http://hdl.handle.net/11693/26168

Published Version (Please cite this version)

https://doi.org/10.1088/0268-1242/6/10/009

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Scholarly Publications - Physics

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English

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Article