Influence of n-type versus p-type AlGaN electron-blocking layer on InGaN/GaN multiple quantum wells light-emitting diodes

Date
2013-08-01
Advisor
Instructor
Source Title
Applied Physics Letters
Print ISSN
0003-6951
Electronic ISSN
Publisher
AIP Publishing
Volume
103
Issue
5
Pages
053512-1 - 053512-5
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Abstract

The effect of n-AlGaN versus p-AlGaN electron-blocking layers (EBLs) on the performance of InGaN/GaN light-emitting diodes is studied in this work. Experimental results suggest that the n-type EBL leads to higher optical output power and external quantum efficiency, compared to the devices with p-AlGaN EBL, which is commonly used today. Numerical simulations on the carrier distribution and energy band diagram reveal that the n-AlGaN EBL is more efficient in preventing electron overflow, while not blocking the hole injection into the active region, hence leading to higher radiative recombination rate within the multiple quantum wells active region. © 2013 AIP Publishing LLC.

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Other identifiers
Book Title
Keywords
Active Regions, Carrier Distributions, Electron Overflow, Energy-band Diagram, External Quantum Efficiency, Hole Injection, Optical Output Power, Radiative Recombination Rate
Citation
Published Version (Please cite this version)