Ligand exchange and impurity doping in 2d cdse nanoplatelet thin films and their applications

Simple item page
buir.contributor.authorDemir, Hilmi Volkan
buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage210073910en_US
dc.citation.issueNumber1en_US
dc.citation.spage2100739-1en_US
dc.citation.volumeNumber8en_US
dc.contributor.authorLee, W, S.
dc.contributor.authorKang, Y-G.
dc.contributor.authorLee, Y. M.
dc.contributor.authorJean, S.
dc.contributor.authorSharma, A.
dc.contributor.authorDemir, Hilmi Volkan
dc.contributor.authorHan, M. J.
dc.contributor.authorKoh, W-K.
dc.contributor.authorOh, S. J.
dc.date.accessioned2022-01-24T06:54:07Z
dc.date.available2022-01-24T06:54:07Z
dc.date.issued2021-09-23
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractThe effects of halide-ligand exchange and Cu and Ag doping are studied on structural, optical, and electrical properties of four monolayer CdSe nanoplatelet (NPL) and NPL thin films. Combinational study shows that NH4Cl-treatment on CdSe NPL and NPL thin films show tetragonal lattice distortion of NPL, side-to-side attachment between NPLs, bathochromic shift in absorption spectra, and complete quenching of band-edge and dopant-induced emissions. First-principle calculations reveal that Cl creates states below valence band maximum while Ag and Cu dopants create acceptor-like states, explaining the change of their optical property. Field-effect transistors are fabricated to investigate the effect of doping and reduced interplatelet distance on electrical properties of CdSe NPL thin films, demonstrating Cu and Ag dopants mitigate n-type character of CdSe NPL thin films. Temperature-dependent electrical characterization is conducted to further understand charge transport behavior depending on the existence of dopants. This work provides scientific information on the influence of surface chemistry and impurity doping on quantum confined semiconductors and new directions for the design of high-performance nanomaterial-based electronic and optoelectronic devices.en_US
dc.description.provenanceSubmitted by Samet Emre (samet.emre@bilkent.edu.tr) on 2022-01-24T06:54:07Z No. of bitstreams: 1 Ligand_exchange_and_impurity_doping_in_2d_cdse_nanoplatelet_thin_films_and_their_applications.pdf: 4110006 bytes, checksum: c190aab2c47e8446351e453e95d8a998 (MD5)en
dc.description.provenanceMade available in DSpace on 2022-01-24T06:54:07Z (GMT). No. of bitstreams: 1 Ligand_exchange_and_impurity_doping_in_2d_cdse_nanoplatelet_thin_films_and_their_applications.pdf: 4110006 bytes, checksum: c190aab2c47e8446351e453e95d8a998 (MD5) Previous issue date: 2021-09-23en
dc.embargo.release2021-09-23en_US
dc.identifier.doi10.1002/aelm.202100739en_US
dc.identifier.eissn2199-160X
dc.identifier.urihttp://hdl.handle.net/11693/76758
dc.language.isoEnglishen_US
dc.publisherWiley-VCH Verlag GmbH & Co. KGaAen_US
dc.relation.isversionofhttps://doi.org/10.1002/aelm.202100739en_US
dc.source.titleAdvanced Electronic Materialsen_US
dc.subjectCharge transporten_US
dc.subjectDopingen_US
dc.subjectField-effect transistorsen_US
dc.subjectLigand exchangeen_US
dc.subjectNanoplateletsen_US
dc.titleLigand exchange and impurity doping in 2d cdse nanoplatelet thin films and their applicationsen_US
dc.typeArticleen_US

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Ligand_exchange_and_impurity_doping_in_2d_cdse_nanoplatelet_thin_films_and_their_applications.pdf
Size:
3.92 MB
Format:
Adobe Portable Document Format
Description:
Download
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.69 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

Scholarly Publications - Electrical and Electronics Engineering
Scholarly Publications - Physics
Scholarly Publications - UNAM