The profile of temperature and voltage dependent series resistance and the interface states in (Ni/Au)/Al0.3Ga0.7N/AlN/GaN heterostructures

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage2321en_US
dc.citation.issueNumber11en_US
dc.citation.spage2316en_US
dc.citation.volumeNumber85en_US
dc.contributor.authorTekeli, Z.en_US
dc.contributor.authorAltındal, Ş.en_US
dc.contributor.authorÇakmak, M.en_US
dc.contributor.authorÖzçelik, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2015-07-28T11:58:15Z
dc.date.available2015-07-28T11:58:15Z
dc.date.issued2008-11en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractThe temperature dependence of capacitance–voltage (C–V) and the conductance–voltage (G/w–V) characteristics of (Ni/Au)/Al0.3Ga0.7N/AlN/GaN heterostructures were investigated by considering the effect of series resistance (Rs) and interface states Nss in a wide temperature range (79–395 K). Our experimental results show that both Rs and Nss were found to be strongly functional with temperature and bias voltage. Therefore, they affect the (C–V) and (G/w–V) characteristics. The values of capacitance give two peaks at high temperatures, and a crossing at a certain bias voltage point (∼3.5 V). The first capacitance peaks are located in the forward bias region (∼0.1 V) at a low temperature. However, from 295 K the second capacitance peaks appear and then shift towards the reverse bias region that is located at ∼−4.5 V with increasing temperature. Such behavior, as demonstrated by these anomalous peaks, can be attributed to the thermal restructuring and reordering of the interface states. The capacitance (Cm) and conductance (G/w–V) values that were measured under both reverse and forward bias were corrected for the effect of series resistance in order to obtain the real diode capacitance and conductance. The density of Nss, depending on the temperature, was determined from the (C–V) and (G/w–V) data using the Hill–Coleman Method.en_US
dc.identifier.doi10.1016/j.mee.2008.08.005en_US
dc.identifier.eissn1873-5568
dc.identifier.issn0167-9317
dc.identifier.urihttp://hdl.handle.net/11693/11645
dc.language.isoEnglishen_US
dc.publisherElsevier BVen_US
dc.relation.isversionofhttps://doi.org/10.1016/j.mee.2008.08.005en_US
dc.source.titleMicroelectronic Engineeringen_US
dc.subjectAl0.3Ga0.7N/AlN/GaN heterostructuresen_US
dc.subjectTemperature dependenceen_US
dc.subjectSeries resistanceen_US
dc.subjectInterface statesen_US
dc.subjectNitride passivationen_US
dc.titleThe profile of temperature and voltage dependent series resistance and the interface states in (Ni/Au)/Al0.3Ga0.7N/AlN/GaN heterostructuresen_US
dc.typeArticleen_US

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Department of Physics
Department of Electrical and Electronics Engineering
Institute of Materials Science and Nanotechnology (UNAM)
Nanotechnology Research Center (NANOTAM)