The behavior of the I-V-T characteristics of inhomogeneous (Ni∕Au)-Al0.3Ga0.7N∕AlN∕GaN heterostructures at high temperatures

Simple item page
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage054510-1en_US
dc.citation.issueNumber5en_US
dc.citation.spage054510-8en_US
dc.citation.volumeNumber102en_US
dc.contributor.authorTekeli, Z.en_US
dc.contributor.authorAltındal, S.en_US
dc.contributor.authorÇakmak, M.en_US
dc.contributor.authorÖzçelik, S.en_US
dc.contributor.authorÇalıikan, D.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2015-07-28T12:06:12Z
dc.date.available2015-07-28T12:06:12Z
dc.date.issued2007-09-12en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractWe investigated the behavior of the forward bias current-voltage-temperature (I-V-T) characteristics of inhomogeneous (Ni/Au)-Al0.3Ga0.7N/AlN/GaN heterostructures in the temperature range of 295-415 K. The experimental results show that all forward bias semilogarithmic I-V curves for the different temperatures have a nearly common cross point at a certain bias voltage, even with finite series resistance. At this cross point, the sample current is temperature independent. We also found that the values of series resistance (R-s) that were obtained from Cheung's method are strongly dependent on temperature and the values abnormally increased with increasing temperature. Moreover, the ideality factor (n), zero-bias barrier height (Phi(B0)) obtained from I-V curves, and R-s were found to be strongly temperature dependent and while Phi(B0) increases, n decreases with increasing temperature. Such behavior of Phi(B0) and n is attributed to Schottky barrier inhomogeneities by assuming a Gaussian distribution (GD) of the barrier heights (BHs) at the metal/semiconductor interface. We attempted to draw a Phi(B0) versus q/2kT plot in order to obtain evidence of the GD of BHs, and the values of (Phi) over bar (B0)=1.63 eV and sigma(0)=0.217 V for the mean barrier height and standard deviation at a zero bias, respectively, were obtained from this plot. Therefore, a modified ln(I-0/T-2)-q(2)sigma(2)(0)/2(kT)(2) versus q/kT plot gives Phi(B0) and Richardson constant A(*) as 1.64 eV and 34.25 A/cm(2) K-2, respectively, without using the temperature coefficient of the barrier height. The Richardson constant value of 34.25 A/cm(2) K-2 is very close to the theoretical value of 33.74 A/cm(2) K-2 for undoped Al0,3Ga0,7N. Therefore, it has been concluded that the temperature dependence of the forward I-V characteristics of the (Ni/Au)-Al0.3Ga0.7/AlN/GaN heterostructures can be successfully explained based on the thermionic emission mechanism with the GD of BHs.en_US
dc.identifier.doi10.1063/1.2777881en_US
dc.identifier.eissn1286-0050
dc.identifier.issn1286-0042
dc.identifier.urihttp://hdl.handle.net/11693/13407
dc.language.isoEnglishen_US
dc.publisherEDP Sciencesen_US
dc.relation.isversionofhttps://doi.org/10.1063/1.2777881en_US
dc.source.titleEuropean Physical Journal: Applied Physicsen_US
dc.titleThe behavior of the I-V-T characteristics of inhomogeneous (Ni∕Au)-Al0.3Ga0.7N∕AlN∕GaN heterostructures at high temperaturesen_US
dc.typeArticleen_US

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
The behavior of the I-V-T characteristics of inhomogeneous (Ni∕Au)-Al0.3Ga0.7N∕AlN∕GaN heterostructures at high temperatures.pdf
Size:
673.61 KB
Format:
Adobe Portable Document Format
Description:
Full printable version
Download

Collections

Department of Physics
Department of Electrical and Electronics Engineering
Institute of Materials Science and Nanotechnology (UNAM)
Nanotechnology Research Center (NANOTAM)