Analysis of HfO2 and ZrO2 as high-K dielectric for CMOS nano devices

Simple item page
buir.contributor.authorZafar, Salahuddin
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidZafar, Salahuddin|0000-0002-5212-9602
buir.contributor.orcidÖzbay, Ekmel|0000-0002-9465-1044
dc.citation.epage103en_US
dc.citation.spage99en_US
dc.contributor.authorHasan, T.
dc.contributor.authorZafar, Salahuddin
dc.contributor.authorÖzbay, Ekmel
dc.contributor.authorKashif, A. U.
dc.coverage.spatialAlanya, Turkeyen_US
dc.date.accessioned2023-02-28T07:47:21Z
dc.date.available2023-02-28T07:47:21Z
dc.date.issued2022-05-16
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.descriptionConference Name: International Conf on Electrical and Electronic Engineering (ICEEE)en_US
dc.descriptionDate of Conference: 29-31 March 2022en_US
dc.description.abstractAn analysis has been made on high-K dielectrics (HfO 2 and ZrO 2) for the CMOS process up to 14 nm FAB technology node. The aim is to study the reduction in gate leakage current for Nano-scale devices. High-K Dielectric having K ≥ 20 is beneficial for CMOS Nano-devices, reducing the gate leakage current when EOT ≤ 0.5 nm. MOS structure with high-K, i.e., HfO 2 and ZrO 2 , has been simulated in SILVACO T-CAD to consider as gate stack: metal/oxide/p-Si for the different FAB nodes; 45, 32, 22 & 14 nm. SiO 2 is considered a reference to optimize the MOS structure with high-K dielectric. As a result, 7–8 times the higher physical gate oxide layer is achieved compared to SiO 2 , which has a significant impact on minimizing the gate leakage current.en_US
dc.identifier.doi10.1109/ICEEE55327.2022.9772574en_US
dc.identifier.urihttp://hdl.handle.net/11693/111881
dc.language.isoEnglishen_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.relation.isversionofhttps://doi.org/10.1109/ICEEE55327.2022.9772574en_US
dc.source.titleInternational Conf on Electrical and Electronic Engineering (ICEEE)en_US
dc.subjectCMOSen_US
dc.subjectHigh-K dielectricen_US
dc.subjectE.O.Ten_US
dc.subjectITRSen_US
dc.subjectFAB nodeen_US
dc.subjectTCADen_US
dc.titleAnalysis of HfO2 and ZrO2 as high-K dielectric for CMOS nano devicesen_US
dc.typeConference Paperen_US

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Analysis_of_HfO2_and_ZrO2_as_high-K_dielectric_for_CMOS_nano_devices.pdf
Size:
2.01 MB
Format:
Adobe Portable Document Format
Description:
Download
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.69 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

Nanotechnology Research Center (NANOTAM)