Analysis of HfO2 and ZrO2 as high-K dielectric for CMOS nano devices

Date

2022-05-16

Authors

Hasan, T.
Zafar, Salahuddin
Özbay, Ekmel
Kashif, A. U.

Editor(s)

Advisor

Supervisor

Co-Advisor

Co-Supervisor

Instructor

Citation Stats

Series

Abstract

Source Title

International Conf on Electrical and Electronic Engineering (ICEEE)

Publisher

Institute of Electrical and Electronics Engineers

Course

Other identifiers

Book Title

Keywords

CMOS, High-K dielectric, E.O.T, ITRS, FAB node, TCAD

Degree Discipline

Degree Level

Degree Name

Citation

Published Version (Please cite this version)

Language

English

Type

Conference Paper