Analysis of HfO2 and ZrO2 as high-K dielectric for CMOS nano devices
Date
2022-05-16
Authors
Hasan, T.
Zafar, Salahuddin
Özbay, Ekmel
Kashif, A. U.
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Source Title
International Conf on Electrical and Electronic Engineering (ICEEE)
Publisher
Institute of Electrical and Electronics Engineers
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CMOS, High-K dielectric, E.O.T, ITRS, FAB node, TCAD
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English
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Conference Paper