Spectroscopic ellipsometry and raman spectroscopy of Bi1-xSbxTeI solid solutions with x≤0.1

Simple item page
buir.contributor.authorJahangirov, Seymur
buir.contributor.orcidJahangirov, Seymur|0000-0002-0548-4820
dc.citation.epage139727-7en_US
dc.citation.spage139727-1
dc.citation.volumeNumber768
dc.contributor.authorAliev, Z. S.
dc.contributor.authorAlizade, E. H.
dc.contributor.authorMammadov, D. A.
dc.contributor.authorJalilli, J. N.
dc.contributor.authorAliyeva, Y. N.
dc.contributor.authorAbdullayev, N. A.
dc.contributor.authorRagimov, S. S.
dc.contributor.authorBagirova, S. M.
dc.contributor.authorJahangirov, Seymur
dc.contributor.authorMamedov, N. T.
dc.contributor.authorChulkov, E. V.
dc.date.accessioned2024-03-19T12:52:51Z
dc.date.available2024-03-19T12:52:51Z
dc.date.issued2023-02-03
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)
dc.description.abstractSpectroscopic ellipsometry supported by reflectivity measurements and Raman spectroscopy are applied at room temperature to n-type Rashba semiconductors BiTeI and Bi$_{1-x}$Sb$_{x}$TeI with nominal compositions x = 0.05 and 0.1. Complementary four probe Hall measurements are made using standard ac technique and the concentration of free carriers is determined. The Raman spectra, including TO-LO resonances are found to occupy a frequency range below 250 cm$^{-1}$ in the studied materials. The pseudodielectric function, retrieved at different angles of incidence is analyzed focusing on the free carrier absorption (intraband transitions) and the optical transitions between the Rashba-split branches of the conduction band (intersubband vertical transitions). The former transitions with screened plasma frequency anchored to the zero-crossing point of the real part of the pseudodielectric function are described within a simple Drude model and the important parameters such as electron effective mass, electron mobility and high frequency dielectric constant are obtained. Anchored to the Rashba energy, the intersubband transitions obtained for each material by refining the pseudodielectric function from Drude contribution, appear in the imaginary part as a broad peak in the photon energy range between 0.15 and 0.4 eV. A noticeable red shift of this peak for Bi$_{0.9}$Sb$_{0.1}$TeI as compared to BiTeI is proposed to be a manifestation of the reduction of the spin splitting after part of Bi atoms is replaced by lighter Sb atoms.
dc.description.provenanceMade available in DSpace on 2024-03-19T12:52:51Z (GMT). No. of bitstreams: 1 Spectroscopic_ellipsometry_and_raman_spectroscopy_of_Bi1_xSbxTeI_solid_solutions_with_x≤0.1.pdf: 2577415 bytes, checksum: a1299d84a3801e62b4f42acf9d4cae44 (MD5) Previous issue date: 2023-02-03en
dc.embargo.release2025-02-03
dc.identifier.doi10.1016/j.tsf.2023.139727
dc.identifier.eissn1879-2731
dc.identifier.issn0040-6090
dc.identifier.urihttps://hdl.handle.net/11693/114985
dc.language.isoen
dc.publisherElsevier BV
dc.relation.isversionofhttps://dx.doi.org/10.1016/j.tsf.2023.139727
dc.rightsCC BY-NC-ND 4.0 DEED (Attribution-NonCommercial-NoDerivs 4.0 International)
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/
dc.source.titleThin Solid Films
dc.subjectRashba semiconductor
dc.subjectDielectric function
dc.subjectLattice vibrations
dc.subjectIntraband transitions
dc.subjectIntersubband transitions
dc.titleSpectroscopic ellipsometry and raman spectroscopy of Bi1-xSbxTeI solid solutions with x≤0.1
dc.typeArticle

Files

Original bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
Spectroscopic_ellipsometry_and_raman_spectroscopy_of_Bi1_xSbxTeI_solid_solutions_with_x≤0.1.pdf
Size:
2.46 MB
Format:
Adobe Portable Document Format
Download
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
2.01 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

Scholarly Publications - UNAM