On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer

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buir.contributor.authorDemir, Hilmi Volkan
buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage073511-5en_US
dc.citation.issueNumber7en_US
dc.citation.spage073511-1en_US
dc.citation.volumeNumber104en_US
dc.contributor.authorZhang Z.-H.en_US
dc.contributor.authorJi Y.en_US
dc.contributor.authorLiu W.en_US
dc.contributor.authorTan S.T.en_US
dc.contributor.authorKyaw, Z.en_US
dc.contributor.authorJu, Z.en_US
dc.contributor.authorZhang X.en_US
dc.contributor.authorHasanov N.en_US
dc.contributor.authorLu S.en_US
dc.contributor.authorZhang, Y.en_US
dc.contributor.authorZhu B.en_US
dc.contributor.authorSun, X. W.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.date.accessioned2015-07-28T12:03:14Z
dc.date.available2015-07-28T12:03:14Z
dc.date.issued2014en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractIn this work, the origin of electron blocking effect of n-type Al 0.25Ga0.75N electron blocking layer (EBL) for c+ InGaN/GaN light-emitting diodes has been investigated through dual-wavelength emission method. It is found that the strong polarization induced electric field within the n-EBL reduces the thermal velocity and correspondingly the mean free path of the hot electrons. As a result, the electron capture efficiency of the multiple quantum wells is enhanced, which significantly reduces the electron overflow from the active region and increases the radiative recombination rate with holes. © 2014 AIP Publishing LLC.en_US
dc.description.provenanceMade available in DSpace on 2015-07-28T12:03:14Z (GMT). No. of bitstreams: 1 HV5.pdf: 1673859 bytes, checksum: a21630606eb97ab2051ae7f67deb4ec2 (MD5)en
dc.identifier.doi10.1063/1.4866041en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/12813
dc.language.isoEnglishen_US
dc.publisherAIP Publishingen_US
dc.relation.isversionofhttp://dx.doi.org/ 10.1063/1.4866041en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectElectric Fieldsen_US
dc.subjectLight Emitting Diodesen_US
dc.subjectSemiconductor Quantum Wellsen_US
dc.titleOn the origin of the electron blocking effect by an n-type AlGaN electron blocking layeren_US
dc.typeArticleen_US

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