Blue InGaN/GaN-based quantum electroabsorption modulators
buir.contributor.orcid | Demir, Hilmi Volkan|0000-0003-1793-112X | |
dc.citation.epage | 20 | en_US |
dc.citation.spage | 18 | en_US |
dc.contributor.author | Sarı, Emre | en_US |
dc.contributor.author | Nizamoğlu, Sedat. | en_US |
dc.contributor.author | Özel, Tuncay | en_US |
dc.contributor.author | Demir, Hilmi Volkan | en_US |
dc.coverage.spatial | Perth, WA, Australia | en_US |
dc.date.accessioned | 2016-02-08T11:46:50Z | |
dc.date.available | 2016-02-08T11:46:50Z | |
dc.date.issued | 2006 | en_US |
dc.department | Department of Physics | en_US |
dc.department | Institute of Materials Science and Nanotechnology (UNAM) | en_US |
dc.department | Department of Electrical and Electronics Engineering | en_US |
dc.description | Date of Conference: 6-8 Dec. 2006 | en_US |
dc.description.abstract | We introduce InGaN/GaN-based quantum electroabsorption modulator that incorporates ∼5 nm thick In0.35Ga0.65N/GaN quantum structures for operation in the blue spectral range of 420-430 nm. This device exhibits an optical absorption coefficient change of ∼6000 cm-1 below the band edge at highly transmissive, blue region (at λ peak=424 nm) with a 6 V swing and emits blue light (at λpeak=440 nm) with an optical output power of 0.35 mW at a 20 mA current injection level. Unlike infrared III-V quantum modulators, this blue modulator shows a blue shift in its electroabsorption (for λ < 418 nm) with increasing applied field accross it, due to high alternating polarization fields in its quantum structures; this electroabsorption behavior is opposite to the conventional quantum confined Stark effect that features common red shift. This device holds great promise for > 10 GHz optical clock injection directly into silicon CMOS chips in the blue because of its low parasitic in-series resistance (< 100 Ω) and the possibility to make smaller device mesas for low capacitance (1.2 fF for a 10μm×10μm mesa size). Considering high-speed operation and high responsivity of silicon-on-insulator (SOI) photodetectors in the blue range, unlike in the infrared, this approach eliminates the need for on-chip hybrid integration of Si CMOS with III-V photodetectors. Furthermore, the efficient electroluminescence of this device makes it feasible to consider on-chip blue laser-modulator integration for a compact optical clocking scheme. © 2006 IEEE. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T11:46:50Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2006 | en |
dc.identifier.doi | 10.1109/COMMAD.2006.4429867 | en_US |
dc.identifier.uri | http://hdl.handle.net/11693/27179 | |
dc.language.iso | English | en_US |
dc.publisher | IEEE | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1109/COMMAD.2006.4429867 | en_US |
dc.source.title | 2006 Conference on Optoelectronic and Microelectronic Materials and Devices | en_US |
dc.subject | Electroabsorption | en_US |
dc.subject | GaN | en_US |
dc.subject | InGaN | en_US |
dc.subject | Modulator | en_US |
dc.subject | Quantum structure | en_US |
dc.subject | Light absorption | en_US |
dc.subject | Modulators | en_US |
dc.subject | Pigments | en_US |
dc.subject | Electroabsorption (EA) | en_US |
dc.subject | InGaN/GaN | en_US |
dc.subject | Microelectronic materials | en_US |
dc.subject | Electroabsorption modulators | en_US |
dc.title | Blue InGaN/GaN-based quantum electroabsorption modulators | en_US |
dc.type | Conference Paper | en_US |
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