Blue InGaN/GaN-based quantum electroabsorption modulators

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buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage20en_US
dc.citation.spage18en_US
dc.contributor.authorSarı, Emreen_US
dc.contributor.authorNizamoğlu, Sedat.en_US
dc.contributor.authorÖzel, Tuncayen_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.coverage.spatialPerth, WA, Australiaen_US
dc.date.accessioned2016-02-08T11:46:50Z
dc.date.available2016-02-08T11:46:50Z
dc.date.issued2006en_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.descriptionDate of Conference: 6-8 Dec. 2006en_US
dc.description.abstractWe introduce InGaN/GaN-based quantum electroabsorption modulator that incorporates ∼5 nm thick In0.35Ga0.65N/GaN quantum structures for operation in the blue spectral range of 420-430 nm. This device exhibits an optical absorption coefficient change of ∼6000 cm-1 below the band edge at highly transmissive, blue region (at λ peak=424 nm) with a 6 V swing and emits blue light (at λpeak=440 nm) with an optical output power of 0.35 mW at a 20 mA current injection level. Unlike infrared III-V quantum modulators, this blue modulator shows a blue shift in its electroabsorption (for λ < 418 nm) with increasing applied field accross it, due to high alternating polarization fields in its quantum structures; this electroabsorption behavior is opposite to the conventional quantum confined Stark effect that features common red shift. This device holds great promise for > 10 GHz optical clock injection directly into silicon CMOS chips in the blue because of its low parasitic in-series resistance (< 100 Ω) and the possibility to make smaller device mesas for low capacitance (1.2 fF for a 10μm×10μm mesa size). Considering high-speed operation and high responsivity of silicon-on-insulator (SOI) photodetectors in the blue range, unlike in the infrared, this approach eliminates the need for on-chip hybrid integration of Si CMOS with III-V photodetectors. Furthermore, the efficient electroluminescence of this device makes it feasible to consider on-chip blue laser-modulator integration for a compact optical clocking scheme. © 2006 IEEE.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T11:46:50Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2006en
dc.identifier.doi10.1109/COMMAD.2006.4429867en_US
dc.identifier.urihttp://hdl.handle.net/11693/27179
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/COMMAD.2006.4429867en_US
dc.source.title2006 Conference on Optoelectronic and Microelectronic Materials and Devicesen_US
dc.subjectElectroabsorptionen_US
dc.subjectGaNen_US
dc.subjectInGaNen_US
dc.subjectModulatoren_US
dc.subjectQuantum structureen_US
dc.subjectLight absorptionen_US
dc.subjectModulatorsen_US
dc.subjectPigmentsen_US
dc.subjectElectroabsorption (EA)en_US
dc.subjectInGaN/GaNen_US
dc.subjectMicroelectronic materialsen_US
dc.subjectElectroabsorption modulatorsen_US
dc.titleBlue InGaN/GaN-based quantum electroabsorption modulatorsen_US
dc.typeConference Paperen_US

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