Defect luminescence in undoped p-type GaSe

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buir.contributor.authorAydınlı, Atilla
dc.citation.epage867en_US
dc.citation.issueNumber12en_US
dc.citation.spage859en_US
dc.citation.volumeNumber81en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorGasanly, N. M.en_US
dc.contributor.authorGökşen, K.en_US
dc.date.accessioned2016-02-08T10:34:10Z
dc.date.available2016-02-08T10:34:10Z
dc.date.issued2001en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractPhotoluminescence (PL) spectra of undoped single crystals of the layered semiconductor GaSe have been measured in the temperature range from 10 K to room temperature and in the wavelength range from 635 to 750 nm. Two wide bands centred at 644 and 695 nm have been observed at T = 10 K. A detailed analysis of the spectra obtained by varying the excitation intensity and temperature resulted in the identification of the levels involved. A simple model is proposed to account for the observed data.en_US
dc.identifier.doi10.1080/09500830110093885en_US
dc.identifier.eissn1362-3036
dc.identifier.issn0950-0839
dc.identifier.urihttp://hdl.handle.net/11693/24773
dc.language.isoEnglishen_US
dc.publisherTaylor & Francisen_US
dc.relation.isversionofhttp://dx.doi.org/10.1080/09500830110093885en_US
dc.source.titlePhilosophical Magazine Lettersen_US
dc.subjectPhotoluminescenceen_US
dc.subjectSemiconducting gallium compoundsen_US
dc.subjectSpectrum analysisen_US
dc.subjectThermoanalysisen_US
dc.subjectExcitation intensityen_US
dc.subjectWavelengthsen_US
dc.subjectSingle crystalsen_US
dc.titleDefect luminescence in undoped p-type GaSeen_US
dc.typeArticleen_US

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