High efficiency 35 GHz MMICs based on 0.2 μm AlGaN/GaN HEMT technology

Simple item page
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage9en_US
dc.citation.spage1en_US
dc.contributor.authorAkoğlu, Büşra Çankaya
dc.contributor.authorSütbaş, Batuhan
dc.contributor.authorÖzbay, Ekmel
dc.date.accessioned2023-02-28T12:12:47Z
dc.date.available2023-02-28T12:12:47Z
dc.date.issued2022-06-16
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractIn this paper, two high efficiency monolithic microwave integrated circuits (MMICs) are demonstrated using NANOTAM's in-house Ka-band fabrication technology. AlGaN/GaN HEMTs with 0.2 μm gate lengths are characterized, and an output power density of 2.9 W/mm is achieved at 35 GHz. A three-stage driver amplifier MMIC is designed, which has a measured gain higher than 19.3 dB across the frequency band of 33–36 GHz. The driver amplifier exhibits 31.9 dB output power and 26.5% power-added efficiency (PAE) at 35 GHz using 20 V supply voltage with 30% duty cycle. Another two-stage MMIC is realized as a power amplifier with a total output gate periphery of 1.8 mm. The output power and PAE of the power amplifier are measured as 3.91 W and 26.3%, respectively, at 35 GHz using 20 V supply voltage with 30% duty cycle. The high efficiency MMICs presented in this paper exhibit the capabilities of NANOTAM's 0.2 μm AlGaN/GaN on SiC technology.en_US
dc.description.provenanceSubmitted by Zeliha Bucak Çelik (zeliha.celik@bilkent.edu.tr) on 2023-02-28T12:12:46Z No. of bitstreams: 1 High_efficiency_35_GHz_MMICs_based_on_0.2_μm_AlGaNGaN_HEMT_technology.pdf: 1094570 bytes, checksum: fd58a0514a50e43c412729c22f13aba6 (MD5)en
dc.description.provenanceMade available in DSpace on 2023-02-28T12:12:47Z (GMT). No. of bitstreams: 1 High_efficiency_35_GHz_MMICs_based_on_0.2_μm_AlGaNGaN_HEMT_technology.pdf: 1094570 bytes, checksum: fd58a0514a50e43c412729c22f13aba6 (MD5) Previous issue date: 2022-06-16en
dc.identifier.doi10.1017/S1759078722000617en_US
dc.identifier.issn1759-0787
dc.identifier.urihttp://hdl.handle.net/11693/111923
dc.language.isoEnglishen_US
dc.publisherCambridge University Pressen_US
dc.relation.isversionofhttps://doi.org/10.1017/S1759078722000617en_US
dc.source.titleInternational Journal of Microwave and Wireless Technologiesen_US
dc.subjectGallium nitrideen_US
dc.subjectHEMTen_US
dc.subjectKa-banden_US
dc.subjectHigh efficiencyen_US
dc.subjectPower amplifieren_US
dc.subjectDriver amplifieren_US
dc.subjectMMICen_US
dc.titleHigh efficiency 35 GHz MMICs based on 0.2 μm AlGaN/GaN HEMT technologyen_US
dc.typeArticleen_US

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
High_efficiency_35_GHz_MMICs_based_on_0.2_μm_AlGaNGaN_HEMT_technology.pdf
Size:
1.04 MB
Format:
Adobe Portable Document Format
Description:
Download
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.69 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

Scholarly Publications - NANOTAM