High efficiency 35 GHz MMICs based on 0.2 μm AlGaN/GaN HEMT technology

Date
2022-06-16
Advisor
Instructor
Source Title
International Journal of Microwave and Wireless Technologies
Print ISSN
1759-0787
Electronic ISSN
Publisher
Cambridge University Press
Volume
Issue
Pages
1 - 9
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Abstract

In this paper, two high efficiency monolithic microwave integrated circuits (MMICs) are demonstrated using NANOTAM's in-house Ka-band fabrication technology. AlGaN/GaN HEMTs with 0.2 μm gate lengths are characterized, and an output power density of 2.9 W/mm is achieved at 35 GHz. A three-stage driver amplifier MMIC is designed, which has a measured gain higher than 19.3 dB across the frequency band of 33–36 GHz. The driver amplifier exhibits 31.9 dB output power and 26.5% power-added efficiency (PAE) at 35 GHz using 20 V supply voltage with 30% duty cycle. Another two-stage MMIC is realized as a power amplifier with a total output gate periphery of 1.8 mm. The output power and PAE of the power amplifier are measured as 3.91 W and 26.3%, respectively, at 35 GHz using 20 V supply voltage with 30% duty cycle. The high efficiency MMICs presented in this paper exhibit the capabilities of NANOTAM's 0.2 μm AlGaN/GaN on SiC technology.

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Other identifiers
Book Title
Keywords
Gallium nitride, HEMT, Ka-band, High efficiency, Power amplifier, Driver amplifier, MMIC
Citation
Published Version (Please cite this version)