Realization of a p-n junction in a single layer boron-phosphide

buir.contributor.authorDurgun, Engin
dc.citation.epage13020en_US
dc.citation.issueNumber19en_US
dc.citation.spage13013en_US
dc.citation.volumeNumber17en_US
dc.contributor.authorÇakır, D.en_US
dc.contributor.authorKecik, D.en_US
dc.contributor.authorSahin, H.en_US
dc.contributor.authorDurgun, Enginen_US
dc.contributor.authorPeeters, F. M.en_US
dc.date.accessioned2016-02-08T09:53:10Z
dc.date.available2016-02-08T09:53:10Z
dc.date.issued2015en_US
dc.description.abstractTwo-dimensional (2D) materials have attracted growing interest due to their potential use in the next generation of nanoelectronic and optoelectronic applications. On the basis of first-principles calculations based on density functional theory, we first investigate the electronic and mechanical properties of single layer boron phosphide (h-BP). Our calculations show that h-BP is a mechanically stable 2D material with a direct band gap of 0.9 eV at the K-point, promising for both electronic and optoelectronic applications. We next investigate the electron transport properties of a p-n junction constructed from single layer boron phosphide (h-BP) using the non-equilibrium Green's function formalism. The n- and p-type doping of BP are achieved by substitutional doping of B with C and P with Si, respectively. C(Si) substitutional doping creates donor (acceptor) states close to the conduction (valence) band edge of BP, which are essential to construct an efficient p-n junction. By modifying the structure and doping concentration, it is possible to tune the electronic and transport properties of the p-n junction which exhibits not only diode characteristics with a large current rectification but also negative differential resistance (NDR). The degree of NDR can be easily tuned via device engineering.en_US
dc.identifier.doi10.1039/c5cp00414den_US
dc.identifier.issn1463-9076
dc.identifier.urihttp://hdl.handle.net/11693/21926
dc.language.isoEnglishen_US
dc.publisherRoyal Society of Chemistryen_US
dc.relation.isversionofhttp://dx.doi.org/10.1039/c5cp00414den_US
dc.source.titlePhysical Chemistry Chemical Physicsen_US
dc.subjectMonolayeren_US
dc.subject2Den_US
dc.subjectP–n junctionen_US
dc.subjectNanoscaleen_US
dc.subjectNDRen_US
dc.titleRealization of a p-n junction in a single layer boron-phosphideen_US
dc.typeArticleen_US
Files