Realization of a p-n junction in a single layer boron-phosphide
| buir.contributor.author | Durgun, Engin | |
| dc.citation.epage | 13020 | en_US |
| dc.citation.issueNumber | 19 | en_US |
| dc.citation.spage | 13013 | en_US |
| dc.citation.volumeNumber | 17 | en_US |
| dc.contributor.author | Çakır, D. | en_US |
| dc.contributor.author | Kecik, D. | en_US |
| dc.contributor.author | Sahin, H. | en_US |
| dc.contributor.author | Durgun, Engin | en_US |
| dc.contributor.author | Peeters, F. M. | en_US |
| dc.date.accessioned | 2016-02-08T09:53:10Z | |
| dc.date.available | 2016-02-08T09:53:10Z | |
| dc.date.issued | 2015 | en_US |
| dc.description.abstract | Two-dimensional (2D) materials have attracted growing interest due to their potential use in the next generation of nanoelectronic and optoelectronic applications. On the basis of first-principles calculations based on density functional theory, we first investigate the electronic and mechanical properties of single layer boron phosphide (h-BP). Our calculations show that h-BP is a mechanically stable 2D material with a direct band gap of 0.9 eV at the K-point, promising for both electronic and optoelectronic applications. We next investigate the electron transport properties of a p-n junction constructed from single layer boron phosphide (h-BP) using the non-equilibrium Green's function formalism. The n- and p-type doping of BP are achieved by substitutional doping of B with C and P with Si, respectively. C(Si) substitutional doping creates donor (acceptor) states close to the conduction (valence) band edge of BP, which are essential to construct an efficient p-n junction. By modifying the structure and doping concentration, it is possible to tune the electronic and transport properties of the p-n junction which exhibits not only diode characteristics with a large current rectification but also negative differential resistance (NDR). The degree of NDR can be easily tuned via device engineering. | en_US |
| dc.description.provenance | Made available in DSpace on 2016-02-08T09:53:10Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2015 | en_US |
| dc.identifier.doi | 10.1039/c5cp00414d | en_US |
| dc.identifier.issn | 1463-9076 | |
| dc.identifier.uri | http://hdl.handle.net/11693/21926 | |
| dc.language.iso | English | en_US |
| dc.publisher | Royal Society of Chemistry | en_US |
| dc.relation.isversionof | http://dx.doi.org/10.1039/c5cp00414d | en_US |
| dc.source.title | Physical Chemistry Chemical Physics | en_US |
| dc.subject | Monolayer | en_US |
| dc.subject | 2D | en_US |
| dc.subject | P–n junction | en_US |
| dc.subject | Nanoscale | en_US |
| dc.subject | NDR | en_US |
| dc.title | Realization of a p-n junction in a single layer boron-phosphide | en_US |
| dc.type | Article | en_US |
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