Effect of reactor pressure on optical and electrical properties of InN films grown by high-pressure chemical vapor deposition

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buir.contributor.authorBıyıklı, Necmi
buir.contributor.authorOkyay, Ali Kemal
dc.citation.epage429en_US
dc.citation.issueNumber4-5en_US
dc.citation.spage423en_US
dc.citation.volumeNumber12en_US
dc.contributor.authorAlevli, M.en_US
dc.contributor.authorGungor, N.en_US
dc.contributor.authorAlkis, S.en_US
dc.contributor.authorOzgit Akgun, C.en_US
dc.contributor.authorDonmez, I.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.contributor.authorGamage, S.en_US
dc.contributor.authorSenevirathna, I.en_US
dc.contributor.authorDietz, N.en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.date.accessioned2016-02-08T10:04:07Z
dc.date.available2016-02-08T10:04:07Z
dc.date.issued2015en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractThe influences of reactor pressure on the stoichiometry, free carrier concentration, IR and Hall determined mobility, effective optical band edge, and optical phonon modes of HPCVD grown InN films have been analysed and are reported. The In 3d, and N 1s XPS spectra results revealed In-N and N-In bonding states as well as small concentrations of In-O and N-O bonds, respectively in all samples. InN layers grown at 1 bar were found to contain metallic indium, suggesting that the incorporation of nitrogen into the InN crystal structure was not efficient. The free carrier concentrations, as determined by Hall measurements, were found to decrease with increasing reactor pressure from 1.61×1021 to 8.87×1019 cm-3 and the room-temperature Hall mobility increased with reactor pressure from 21.01 to 155.18 cm2/Vs at 1 and 15 bar reactor pressures, respectively. IR reflectance spectra of all three (1, 8, and 15 bar) InN samples were modelled assuming two distinct layers of InN, having different free carrier concentration, IR mobility, and effective dielectric function values, related to a nucleation/interfacial region at the InN/sapphire, followed by a bulk InN layer. The effective optical band gap has been found to decrease from 1.19 to 0.95 eV with increasing reactor pressure. Improvement of the local structural quality with increasing reactor pressure has been further confirmed by Raman spectroscopy measurements. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_US
dc.identifier.doi10.1002/pssc.201400171en_US
dc.identifier.issn1862-6351
dc.identifier.urihttp://hdl.handle.net/11693/22736
dc.language.isoEnglishen_US
dc.publisherWiley - V C H Verlag GmbH & Co. KGaAen_US
dc.relation.isversionofhttp://dx.doi.org/10.1002/pssc.201400171en_US
dc.source.titlePhysica Status Solidi. C: Current Topics in Solid State Physicsen_US
dc.subjectFTIRen_US
dc.subjectHall measurementsen_US
dc.subjectHigh-pressure CVDen_US
dc.subjectIndium nitrideen_US
dc.subjectMOCVDen_US
dc.subjectSuperatmosphericen_US
dc.subjectXPSen_US
dc.subjectCarrier mobilityen_US
dc.subjectChemical bondsen_US
dc.subjectChemical vapor depositionen_US
dc.subjectCrystal structureen_US
dc.subjectEnergy gapen_US
dc.subjectFourier transform infrared spectroscopyen_US
dc.subjectHall mobilityen_US
dc.subjectHigh pressure effectsen_US
dc.subjectIndiumen_US
dc.subjectMetallorganic chemical vapor depositionen_US
dc.subjectX ray photoelectron spectroscopyen_US
dc.subjectFTIRen_US
dc.subjectHigh pressureen_US
dc.subjectCarrier concentrationen_US
dc.titleEffect of reactor pressure on optical and electrical properties of InN films grown by high-pressure chemical vapor depositionen_US
dc.typeArticleen_US

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Department of Electrical and Electronics Engineering
Institute of Materials Science and Nanotechnology (UNAM)