Electric breakdown in polycrystalline semiconductors with highly nonlinear I-V characteristics: Simulations for simple barrier height models

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buir.contributor.authorTanatar, Bilal
buir.contributor.orcidTanatar, Bilal|0000-0002-5246-0119
dc.citation.epage1220en_US
dc.citation.issueNumber12en_US
dc.citation.spage1211en_US
dc.citation.volumeNumber21en_US
dc.contributor.authorYildirim H.E.en_US
dc.contributor.authorTanatar, Bilalen_US
dc.contributor.authorCanessa, E.en_US
dc.date.accessioned2016-02-08T10:47:05Z
dc.date.available2016-02-08T10:47:05Z
dc.date.issued1997en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractAn extension of the Canessa and Nguyen binary model for the nonlinear current-voltage (I-V) characteristics of polycrystalline semiconductors, based on the electrical properties of individual grains, is presented. Simple analytical models for the nonuniform distribution of barrier heights at grain boundaries are assumed. The set of nonlinear Kirchhoff equations, that determine the macroscopic current across the specimen, and the nonlinearity coefficient α are solved numerically. The applied voltage dependence of the barrier height models gives α values reaching ≈ 50, indicating high nonlinearity as required by potential commercial applications. © Tübi̇tak.en_US
dc.identifier.issn13000101
dc.identifier.urihttp://hdl.handle.net/11693/25578
dc.language.isoEnglishen_US
dc.source.titleTurkish Journal of Physicsen_US
dc.subjectComputer simulationen_US
dc.subjectCurrent voltage characteristicsen_US
dc.subjectElectric breakdownen_US
dc.subjectElectric currentsen_US
dc.subjectGrain boundariesen_US
dc.subjectMathematical modelsen_US
dc.subjectNonlinear equationsen_US
dc.subjectNumerical methodsen_US
dc.subjectPolycrystalline materialsen_US
dc.subjectProblem solvingen_US
dc.subjectBarrier height distributionen_US
dc.subjectBarrier height modelen_US
dc.subjectMacroscopic currenten_US
dc.subjectNonlinear current voltage characteristicsen_US
dc.subjectNonlinear Kirchoff equationen_US
dc.subjectPolycrystalline semiconductoren_US
dc.subjectSemiconductor materialsen_US
dc.titleElectric breakdown in polycrystalline semiconductors with highly nonlinear I-V characteristics: Simulations for simple barrier height modelsen_US
dc.typeArticleen_US

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