Wideband 'black silicon' for mid-infrared applications

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buir.contributor.authorOkyay, Ali Kemal
dc.citation.issueNumber6en_US
dc.citation.volumeNumber19en_US
dc.contributor.authorGörgülü, Kazımen_US
dc.contributor.authorYılmaz, Mehmeten_US
dc.contributor.authorTopallı, Kağanen_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.date.accessioned2018-04-12T11:04:47Z
dc.date.available2018-04-12T11:04:47Z
dc.date.issued2017en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractIn this paper, we investigate the absorption of mid-infrared light by low resistivity silicon textured via deep reactive ion etching. An analytical description of the wave propagation in black silicon texture is presented, showing agreement with the experiment and the computational analysis. We also study the dependence of absorption spectrum of black silicon structure on the electrical conductivity of silicon substrate. The structures investigated unveil wideband, all-silicon infrared absorbers applicable for infrared imaging and spectroscopy with simple CMOS compatible fabrication suitable for optoelectronic integration.en_US
dc.identifier.doi10.1088/2040-8986/aa69d6en_US
dc.identifier.issn2040-8978
dc.identifier.urihttp://hdl.handle.net/11693/37167
dc.language.isoEnglishen_US
dc.publisherInstitute of Physics Publishingen_US
dc.relation.isversionofhttp://dx.doi.org/10.1088/2040-8986/aa69d6en_US
dc.source.titleJournal of Optics (United Kingdom)en_US
dc.subjectAbsorberen_US
dc.subjectBlack siliconen_US
dc.subjectDeep reactive ion etchingen_US
dc.subjectInfrareden_US
dc.titleWideband 'black silicon' for mid-infrared applicationsen_US
dc.typeArticleen_US

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Department of Electrical and Electronics Engineering
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