Solar-blind AlGaN-based p-i-n photodetectors with high breakdown voltage and detectivity

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage103502-3en_US
dc.citation.issueNumber10en_US
dc.citation.spage103502-1en_US
dc.citation.volumeNumber92en_US
dc.contributor.authorTut, T.en_US
dc.contributor.authorYelboga, T.en_US
dc.contributor.authorUlker, E.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T10:09:45Z
dc.date.available2016-02-08T10:09:45Z
dc.date.issued2008en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractWe report on the high performance solar-blind AlGaN-based p-i-n photodetectors that are grown by metal-organic chemical vapor deposition on c -plane sapphire substrates. The dark current of the 200 μm diameter devices was measured to be on the order of 5 fA for bias voltages up to 10 V. The breakdown voltages were higher than 200 V. The responsivities of the photodetectors were 0.052 and 0.093 AW at 280 nm under 0 and 40 V reverse biases, respectively. We achieved a detectivity of 7.5× 1014 cm Hz12 W for 200 μm diameter AlGaN p-i-n detectors.en_US
dc.identifier.doi10.1063/1.2895643en_US
dc.identifier.eissn1077-3118
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/23162
dc.language.isoEnglishen_US
dc.publisherAIP Publishing LLCen_US
dc.relation.isversionofhttps://doi.org/10.1063/1.2895643en_US
dc.source.titleApplied Physics Lettersen_US
dc.titleSolar-blind AlGaN-based p-i-n photodetectors with high breakdown voltage and detectivityen_US
dc.typeArticleen_US

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Department of Electrical and Electronics Engineering
Department of Physics
Institute of Materials Science and Nanotechnology (UNAM)
Nanotechnology Research Center (NANOTAM)