Reaction path for Te during surfactant-mediated epitaxial growth of GaAs (100)
| buir.contributor.author | Çıracı, Salim | |
| buir.contributor.orcid | Çıracı, Salim|0000-0001-8023-9860 | |
| dc.citation.epage | 041301-4 | en_US |
| dc.citation.issueNumber | 4 | en_US |
| dc.citation.spage | 041301-1 | en_US |
| dc.citation.volumeNumber | 63 | en_US |
| dc.contributor.author | Consorte, C. D. | en_US |
| dc.contributor.author | Fong, C. Y. | en_US |
| dc.contributor.author | Watson, M. D. | en_US |
| dc.contributor.author | Yang, L. H. | en_US |
| dc.contributor.author | Çıracı, Salim | en_US |
| dc.date.accessioned | 2019-02-05T11:47:51Z | |
| dc.date.available | 2019-02-05T11:47:51Z | |
| dc.date.issued | 2001 | en_US |
| dc.department | Department of Physics | en_US |
| dc.description.abstract | Using first-principles calculations and experimental evidence concerning the essential environment for surfactant-mediated epitaxial growth on the GaAs/Te~100! surface, we determine a short-ranged reaction path for the As↔Te exchange that is energetically favorable and prepares the surface for continued layer-by-layer growth. Furthermore, we explain the required partial coverage of the surfactant atoms as well as the required presence of both As and Ga adatoms. | en_US |
| dc.description.provenance | Submitted by Mustafa Er (mer@bilkent.edu.tr) on 2019-02-05T11:47:51Z No. of bitstreams: 1 Reaction path for Te during surfactant - mediated epitaxial growth of GaAs (100).pdf: 204166 bytes, checksum: 1dc2c7533c22729a0391402a0a09375f (MD5) | en |
| dc.description.provenance | Made available in DSpace on 2019-02-05T11:47:51Z (GMT). No. of bitstreams: 1 Reaction path for Te during surfactant - mediated epitaxial growth of GaAs (100).pdf: 204166 bytes, checksum: 1dc2c7533c22729a0391402a0a09375f (MD5) Previous issue date: 2001 | en |
| dc.identifier.doi | 10.1103/PhysRevB.63.041301 | en_US |
| dc.identifier.eissn | 1550-235X | |
| dc.identifier.issn | 1098-0121 | |
| dc.identifier.uri | http://hdl.handle.net/11693/48883 | |
| dc.language.iso | English | en_US |
| dc.publisher | American Physical Society | en_US |
| dc.relation.isversionof | https://doi.org/10.1103/PhysRevB.63.041301 | en_US |
| dc.source.title | Physical Review B - Condensed Matter and Materials Physics | en_US |
| dc.subject | GAAS(001) | en_US |
| dc.subject | Mechanism | en_US |
| dc.title | Reaction path for Te during surfactant-mediated epitaxial growth of GaAs (100) | en_US |
| dc.type | Article | en_US |
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