Generation of InN nanocrystals in organic solution through laser ablation of high pressure chemical vapor deposition-grown InN thin film

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buir.contributor.authorOkyay, Ali Kemal
dc.citation.epage6en_US
dc.citation.issueNumber8en_US
dc.citation.spage1en_US
dc.citation.volumeNumber14en_US
dc.contributor.authorAlkis, S.en_US
dc.contributor.authorAlevli, M.en_US
dc.contributor.authorBurzhuev, S.en_US
dc.contributor.authorVural, H. A.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.contributor.authorOrtaƧ, B.en_US
dc.date.accessioned2016-02-08T09:45:36Z
dc.date.available2016-02-08T09:45:36Z
dc.date.issued2012-07-27en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractWe report the synthesis of colloidal InN nanocrystals (InN-NCs) in organic solution through nanosecond pulsed laser ablation of high pressure chemical vapor deposition-grown InN thin film on GaN/sapphire template substrate. The size, the structural, the optical, and the chemical characteristics of InN-NCs demonstrate that the colloidal InN crystalline nanostructures in ethanol are synthesized with spherical shape within 5.9-25.3, 5.45-34.8, 3.24-36 nm particle-size distributions, increasing the pulse energy value. The colloidal InN-NCs solutions present strong absorption edge tailoring from NIR region to UV region.en_US
dc.identifier.doi10.1007/s11051-012-1048-5en_US
dc.identifier.issn1388-0764
dc.identifier.urihttp://hdl.handle.net/11693/21388
dc.language.isoEnglishen_US
dc.publisherSpringeren_US
dc.relation.isversionofhttp://dx.doi.org/10.1007/s11051-012-1048-5en_US
dc.source.titleJournal of Nanoparticle Researchen_US
dc.subjectHigh pressure chemical vapor depositionen_US
dc.subjectInN nanocrystal synthesisen_US
dc.subjectLaser ablation of InN thin film in organic solutionen_US
dc.subjectAbsorption edgesen_US
dc.subjectChemical characteristicen_US
dc.subjectChemical vaporen_US
dc.subjectCrystalline nanostructureen_US
dc.subjectGaN/sapphireen_US
dc.subjectHigh pressureen_US
dc.subjectHigh pressure chemical vapor depositionen_US
dc.subjectInN thin filmsen_US
dc.subjectNanocrystal synthesisen_US
dc.subjectNanosecond pulsed laseren_US
dc.subjectNIR regionsen_US
dc.subjectOrganic solutionsen_US
dc.subjectPulse energiesen_US
dc.subjectSpherical shapeen_US
dc.subjectTemplate substratesen_US
dc.subjectUV regionen_US
dc.subjectChemical vapor depositionen_US
dc.subjectEthanolen_US
dc.subjectLaser ablationen_US
dc.subjectThin filmsen_US
dc.subjectVaporsen_US
dc.subjectNanocrystalsen_US
dc.subjectAlcoholen_US
dc.subjectIndiumen_US
dc.subjectNanocrystalen_US
dc.subjectNanomaterialen_US
dc.subjectOrganic compounden_US
dc.subjectAbsorptionen_US
dc.subjectArticleen_US
dc.subjectChemical analysisen_US
dc.subjectCrystalen_US
dc.subjectLaseren_US
dc.subjectParticle sizeen_US
dc.subjectPriority journalen_US
dc.subjectRaman spectrometryen_US
dc.subjectSynthesisen_US
dc.subjectTransmission electron microscopyen_US
dc.subjectUltraviolet radiationen_US
dc.subjectVaporen_US
dc.subjectX ray photoelectron spectroscopyen_US
dc.titleGeneration of InN nanocrystals in organic solution through laser ablation of high pressure chemical vapor deposition-grown InN thin filmen_US
dc.typeArticleen_US

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Institute of Materials Science and Nanotechnology (UNAM)
Department of Electrical and Electronics Engineering