Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance

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buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage44en_US
dc.citation.spage41en_US
dc.contributor.authorBosi G.en_US
dc.contributor.authorRaffo A.en_US
dc.contributor.authorVadalà V.en_US
dc.contributor.authorTrevisan F.en_US
dc.contributor.authorVannini G.en_US
dc.contributor.authorCengiz, Ömeren_US
dc.contributor.authorŞen, Özlemen_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.coverage.spatialLondon, UKen_US
dc.date.accessioned2018-04-12T11:49:47Z
dc.date.available2018-04-12T11:49:47Z
dc.date.issued2016en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.descriptionDate of Conference: 3-4 Oct. 2016en_US
dc.description.abstractIn this paper, we introduce the use of the low-frequency characterization of electron devices as an accurate and economical way to fast gather consistent data about the electron device performance at microwaves in the evaluation phase of new components, technologies and processes. © 2016 European Microwave Association.en_US
dc.description.provenanceMade available in DSpace on 2018-04-12T11:49:47Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 179475 bytes, checksum: ea0bedeb05ac9ccfb983c327e155f0c2 (MD5) Previous issue date: 2016en
dc.identifier.doi10.1109/EuMIC.2016.7777484en_US
dc.identifier.isbn9782874870446
dc.identifier.urihttp://hdl.handle.net/11693/37743
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/EuMIC.2016.7777484en_US
dc.source.title2016 11th European Microwave Integrated Circuits Conference (EuMIC)en_US
dc.subjectGaNen_US
dc.subjectHEMTen_US
dc.subjectmeasurementsen_US
dc.subjectsemiconductor devicesen_US
dc.subjectElectron devicesen_US
dc.subjectMeasurementsen_US
dc.subjectMicrowave devicesen_US
dc.subjectMicrowave integrated circuitsen_US
dc.subjectMicrowavesen_US
dc.subjectSemiconductor devicesen_US
dc.subjectDevice performanceen_US
dc.subjectEvaluation phaseen_US
dc.subjectLow-frequencyen_US
dc.subjectMicrowave transistorsen_US
dc.subjectNew componentsen_US
dc.subjectTime domain characterizationsen_US
dc.subjectHigh electron mobility transistorsen_US
dc.titleLow-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performanceen_US
dc.typeConference Paperen_US

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