Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance
Date
2016
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2016 11th European Microwave Integrated Circuits Conference (EuMIC)
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IEEE
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Keywords
GaN, HEMT, measurements, semiconductor devices, Electron devices, Measurements, Microwave devices, Microwave integrated circuits, Microwaves, Semiconductor devices, Device performance, Evaluation phase, Low-frequency, Microwave transistors, New components, Time domain characterizations, High electron mobility transistors
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English