Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage2044en_US
dc.citation.issueNumber8en_US
dc.citation.spage2041en_US
dc.citation.volumeNumber516en_US
dc.contributor.authorAcar, S.en_US
dc.contributor.authorLisesivdin, S. B.en_US
dc.contributor.authorKasap, M.en_US
dc.contributor.authorÖzcelik, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2015-07-28T12:06:11Z
dc.date.available2015-07-28T12:06:11Z
dc.date.issued2008-02-29en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractResistivity and Hall effect measurements on nominally undoped Al0.25Ga0.75N/GaN/AlN heterostructures grown on sapphire substrates prepared by metal organic chemical vapor deposition have been carried out as a function of temperature (20-300 K) and magnetic field (0-1.4 T). Variable magnetic field Hall data have been analyzed using the improved quantitative mobility spectrum analysis technique. The mobility and density of the two-dimensional electron gas at the AlGaN/GaN interface and the two-dimensional hole gas at the GaN/AIN interface are separated by quantitative mobility spectrum analysis. The analysis shows that two-channel conduction is present in nominally undoped Al0.25Ga0.75N/GaN/AlN heterostructures grown on sapphire substrate.en_US
dc.description.provenanceMade available in DSpace on 2015-07-28T12:06:11Z (GMT). No. of bitstreams: 1 10.1016-j.tsf.2007.07.161.pdf: 286317 bytes, checksum: f2dcdd98176ff3d127493e62ea5a31a8 (MD5)en
dc.identifier.doi10.1016/j.tsf.2007.07.161en_US
dc.identifier.eissn1879-2731
dc.identifier.issn0040-6090
dc.identifier.urihttp://hdl.handle.net/11693/13404
dc.language.isoEnglishen_US
dc.publisherElsevier BVen_US
dc.relation.isversionofhttps://doi.org/10.1016/j.tsf.2007.07.161en_US
dc.source.titleThin Solid Filmsen_US
dc.subjectAluminium gallium nitride/gallium nitrideen_US
dc.subjectQuantitative mobility spectrum analysisen_US
dc.subjectTwo-dimensional electron gasen_US
dc.subjectTwo-dimensional hole gasen_US
dc.titleDetermination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Depositionen_US
dc.typeArticleen_US

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Department of Physics
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Institute of Materials Science and Nanotechnology (UNAM)
Nanotechnology Research Center (NANOTAM)