An indium-free transparent resistive switching random access memory

buir.contributor.authorDemir, Hilmi Volkan
buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage799en_US
dc.citation.issueNumber6en_US
dc.citation.spage797en_US
dc.citation.volumeNumber32en_US
dc.contributor.authorZheng, K.en_US
dc.contributor.authorSun, X. W.en_US
dc.contributor.authorZhao, J. L.en_US
dc.contributor.authorWang, Y.en_US
dc.contributor.authorYu, H. Y.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.contributor.authorTeo, K. L.en_US
dc.date.accessioned2015-07-28T12:00:37Z
dc.date.available2015-07-28T12:00:37Z
dc.date.issued2011-02-28en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractWe report an indium-free transparent resistive switching random access memory device based on GZO-Ga(2)O(3)-ZnO-Ga(2)O(3)-GZO structure by metal-organic chemical vapor deposition. The memory device shows good transmittance in the visible region and bipolar resistive switching behavior with good cycling characteristics and retention time under room temperature. The conduction and resistive switching mechanism was discussed based on filament theory.en_US
dc.identifier.doi10.1109/LED.2011.2126017en_US
dc.identifier.issn0741-3106
dc.identifier.urihttp://hdl.handle.net/11693/12213
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/LED.2011.2126017en_US
dc.source.titleIEEE Electron Device Lettersen_US
dc.subjectGzoen_US
dc.subjectIndium freeen_US
dc.subjectTransparent resistive switchingen_US
dc.subjectZnOen_US
dc.titleAn indium-free transparent resistive switching random access memoryen_US
dc.typeArticleen_US
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