Ultra-narrow linewidth photo-emitters in polymorphic selenium nanoflakes

buir.contributor.authorKasirga, Talip Serkan
buir.contributor.orcidKasirga, Talip Serkan|0000-0003-3510-5059
dc.citation.epage2204302-11en_US
dc.citation.issueNumber52en_US
dc.citation.spage2204302-1en_US
dc.citation.volumeNumber18en_US
dc.contributor.authorHussain, N.
dc.contributor.authorAhmed, S.
dc.contributor.authorTepe, H. U.
dc.contributor.authorHuang, K.
dc.contributor.authorAvishan, N.
dc.contributor.authorHe, S.
dc.contributor.authorRafique, M.
dc.contributor.authorFarooq, U.
dc.contributor.authorKasirga, Talip Serkan
dc.contributor.authorBek, A.
dc.contributor.authorTuran, R.
dc.contributor.authorShehzad, K.
dc.date.accessioned2023-02-14T13:08:24Z
dc.date.available2023-02-14T13:08:24Z
dc.date.issued2022-07-12
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractPhotoluminescence (PL) in state-of-the-art 2D materials suffers from narrow spectral coverage, relatively broad linewidths, and poor room-temperature (RT) functionality. The authors report ultra-narrow linewidth photo-emitters (ULPs) across the visible to near-infrared wavelength at RT in polymorphic selenium nanoflakes (SeNFs), synthesized via a hot-pressing strategy. Photo-emitters in NIR exhibit full width at half maximum (Γ) of 330 ± 90 µeV, an order of magnitude narrower than the reported ULPs in 2D materials at 300 K, and decrease to 82 ± 70 µeV at 100 K, with coherence time (τc) of 21.3 ps. The capping substrate enforced spatial confinement during thermal expansion at 250 °C is believed to trigger a localized crystal symmetry breaking in SeNFs, causing a polymorphic transition from the semiconducting trigonal (t) to quasi-metallic orthorhombic (orth) phase. Fine structure splitting in orth-Se causes degeneracy in defect-associated bright excitons, resulting in ultra-sharp emission. Combined theoretical and experimental findings, an optimal biaxial compressive strain of −0.45% cm−1 in t-Se is uncovered, induced by the coefficient of thermal expansion mismatch at the selenium/sapphire interface, resulting in bandgap widening from 1.74 to 2.23 ± 0.1 eV. This report underpins the underlying correlation between crystal symmetry breaking induced polymorphism and RT ULPs in SeNFs, and their phase change characteristics. © 2022 Wiley-VCH GmbH.en_US
dc.identifier.doi10.1002/smll.202204302en_US
dc.identifier.eissn1613-6829
dc.identifier.issn1613-6810
dc.identifier.urihttp://hdl.handle.net/11693/111272
dc.language.isoEnglishen_US
dc.publisherWileyen_US
dc.relation.isversionofhttps://www.doi.org/10.1002/smll.202204302en_US
dc.source.titleSmallen_US
dc.subject2D materialsen_US
dc.subjectHot-pressingen_US
dc.subjectPolymorphic phase-transitionen_US
dc.subjectSelenium nanoflakesen_US
dc.subjectUltra-narrow linewidth photo-emittersen_US
dc.titleUltra-narrow linewidth photo-emitters in polymorphic selenium nanoflakesen_US
dc.typeArticleen_US
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