Thermally stimulated current observation of trapping centers in undoped GaSe layered single crystals

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dc.citation.epage301en_US
dc.citation.issueNumber3en_US
dc.citation.spage295en_US
dc.citation.volumeNumber36en_US
dc.contributor.authorGasanly, N. M.en_US
dc.contributor.authorAydınlı, A.en_US
dc.contributor.authorSalihoglu, Ö.en_US
dc.date.accessioned2016-02-08T10:35:24Z
dc.date.available2016-02-08T10:35:24Z
dc.date.issued2001en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractUndoped p-GaSe layered single crystals were grown using Bridgman technique. Thermally stimulated current measurements in the temperature range of 10-300 K were performed at a heating rate of 0.18 K/s. The analysis of the data revealed three trap levels at 0.02, 0.10 and 0.26 eV. The calculation for these traps yielded 8.8 × 10-27, 1.9 × 10-25, and 3.2 × 10-21 cm2 for capture cross sections and 3.2 × 1014, 1.1 × 1016, and 1.2 × 1016 cm-3 for the concentrations, respectively.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:35:24Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2001en
dc.identifier.doi10.1002/1521-4079(200103)36:3<295en_US
dc.identifier.issn0232-1300
dc.identifier.urihttp://hdl.handle.net/11693/24861
dc.language.isoEnglishen_US
dc.publisherWileyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1002/1521-4079(200103)36:3<295en_US
dc.source.titleCrystal Research and Technologyen_US
dc.subjectGaSeen_US
dc.subjectImpurity levelsen_US
dc.subjectLayered crystalsen_US
dc.subjectSemiconductor compoundsen_US
dc.subjectThermally stimulated currenten_US
dc.subjectCrystal growthen_US
dc.subjectCrystal impuritiesen_US
dc.subjectElectric current measurementen_US
dc.subjectElectron energy levelsen_US
dc.subjectElectron trapsen_US
dc.subjectSemiconducting gallium compoundsen_US
dc.subjectThermal effectsen_US
dc.subjectBridgman techniqueen_US
dc.subjectLayered crystalsen_US
dc.subjectThermally stimulated currenten_US
dc.subjectTrapping centersen_US
dc.subjectSingle crystalsen_US
dc.titleThermally stimulated current observation of trapping centers in undoped GaSe layered single crystalsen_US
dc.typeArticleen_US

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