Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06 ≤ x ≤ 0.135) layers

Date
2009-10-13
Advisor
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Source Title
Current Applied Physics
Print ISSN
1567-1739
Electronic ISSN
Publisher
Elsevier
Volume
10
Issue
3
Pages
838 - 841
Language
English
Type
Article
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Abstract

The low-temperature conductivity of InxGa1-xN alloys (0.06 ≤ x ≤ 0.135) is analyzed as a function of indium composition (x). Although our InxGa1-xN alloys were on the metallic side of the metal-insulator transition, neither the Kubo-Greenwood nor Born approach were able to describe the transport properties of the InxGa1-xN alloys. In addition, all of the InxGa1-xN alloys took place below the Ioeffe-Regel regime with their low conductivities. The observed behavior is discussed in the framework of the scaling theory. With decreasing indium composition, a decrease in thermal activation energy is observed. For the metal-insulator transition, the critical indium composition is obtained as xc = 0.0543 for InxGa1-xN alloys.

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Keywords
Electronic transport, InGaN, MIT
Citation
Published Version (Please cite this version)