Voltage contrast X-ray photoelectron spectroscopy reveals graphene-substrate interaction in graphene devices fabricated on the C-and Si-faces of SiC

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.authorSüzer, Şefik
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage121603-5en_US
dc.citation.issueNumber12en_US
dc.citation.spage121603-1en_US
dc.citation.volumeNumber107en_US
dc.contributor.authorAydogan, P.en_US
dc.contributor.authorArslan, E.en_US
dc.contributor.authorCakmakyapan, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorStrupinski, W.en_US
dc.contributor.authorSüzer, Şefiken_US
dc.date.accessioned2016-02-08T09:39:03Z
dc.date.available2016-02-08T09:39:03Z
dc.date.issued2015en_US
dc.departmentDepartment of Chemistryen_US
dc.description.abstractWe report on an X-ray photoelectron spectroscopy (XPS) study of two graphene based devices that were analyzed by imposing a significant current under +3 V bias. The devices were fabricated as graphene layers(s) on hexagonal SiC substrates, either on the C- or Si-terminated faces. Position dependent potential distributions (IR-drop), as measured by variations in the binding energy of a C1s peak are observed to be sporadic for the C-face graphene sample, but very smooth for the Si-face one, although the latter is less conductive. We attribute these sporadic variations in the C-face device to the incomplete electrical decoupling between the graphene layer(s) with the underlying buffer and/or substrate layers. Variations in the Si2p and O1s peaks of the underlayer(s) shed further light into the electrical interaction between graphene and other layers. Since the potential variations are amplified only under applied bias (voltage-contrast), our methodology gives unique, chemically specific electrical information that is difficult to obtain by other techniques.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T09:39:03Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2015en
dc.identifier.doi10.1063/1.4931725en_US
dc.identifier.eissn1077-3118
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/20981
dc.language.isoEnglishen_US
dc.publisherAmerican Institute of Physics Inc.en_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4931725en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectBias voltageen_US
dc.subjectBinding energyen_US
dc.subjectGrapheneen_US
dc.subjectPhotoelectronsen_US
dc.subjectPhotonsen_US
dc.subjectSiliconen_US
dc.subjectSilicon carbideen_US
dc.subjectSubstratesen_US
dc.subjectVoltage measurementen_US
dc.subjectElectrical decouplingen_US
dc.subjectElectrical interactionen_US
dc.subjectGraphene substratesen_US
dc.subjectPosition dependentsen_US
dc.subjectPotential distributionsen_US
dc.subjectPotential variationsen_US
dc.subjectSubstrate layersen_US
dc.subjectX-ray photoelectron spectroscopy studiesen_US
dc.subjectX ray photoelectron spectroscopyen_US
dc.titleVoltage contrast X-ray photoelectron spectroscopy reveals graphene-substrate interaction in graphene devices fabricated on the C-and Si-faces of SiCen_US
dc.typeArticleen_US

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