Power saturation in standard and double-AR unfolded laser diode cavities

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dc.contributor.authorPeters, M. G.en_US
dc.contributor.authorFily, A.en_US
dc.contributor.authorRossin, V.en_US
dc.contributor.authorDemir, Abdullahen_US
dc.coverage.spatialKobe, Japanen_US
dc.date.accessioned2018-04-12T11:42:29Z
dc.date.available2018-04-12T11:42:29Z
dc.date.issued2016en_US
dc.departmentDepartment of Physicsen_US
dc.descriptionDate of Conference: 12-15 September 2016en_US
dc.descriptionConference Name: International Semiconductor Laser Conference, ISLC 2016en_US
dc.description.abstractWe report modeling and experimental results that demonstrate mechanisms limiting the output power of broad area semiconductor lasers. The modeling comprises numerical simulations of the laser cavity with evolution of non-uniform carrier density, photon density, temperature and index. We measure unfolded laser cavities to validate simulation methods and input parameters.en_US
dc.identifier.issn0899-9406en_US
dc.identifier.urihttp://hdl.handle.net/11693/37510
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.source.titleProceedings of the International Semiconductor Laser Conference, ISLC 2016en_US
dc.subjectHigh poweren_US
dc.subjectLaser diodeen_US
dc.subjectSaturationen_US
dc.subjectSimulationen_US
dc.subjectUnfolded cavityen_US
dc.titlePower saturation in standard and double-AR unfolded laser diode cavitiesen_US
dc.typeConference Paperen_US

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