Power saturation in standard and double-AR unfolded laser diode cavities
Date
2016
Editor(s)
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
BUIR Usage Stats
1
views
views
23
downloads
downloads
Series
Abstract
We report modeling and experimental results that demonstrate mechanisms limiting the output power of broad area semiconductor lasers. The modeling comprises numerical simulations of the laser cavity with evolution of non-uniform carrier density, photon density, temperature and index. We measure unfolded laser cavities to validate simulation methods and input parameters.
Source Title
Proceedings of the International Semiconductor Laser Conference, ISLC 2016
Publisher
IEEE
Course
Other identifiers
Book Title
Keywords
Degree Discipline
Degree Level
Degree Name
Citation
Permalink
Published Version (Please cite this version)
Collections
Language
English