Power saturation in standard and double-AR unfolded laser diode cavities

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Abstract

We report modeling and experimental results that demonstrate mechanisms limiting the output power of broad area semiconductor lasers. The modeling comprises numerical simulations of the laser cavity with evolution of non-uniform carrier density, photon density, temperature and index. We measure unfolded laser cavities to validate simulation methods and input parameters.

Source Title

Proceedings of the International Semiconductor Laser Conference, ISLC 2016

Publisher

IEEE

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Citation

Published Version (Please cite this version)

Language

English