Power saturation in standard and double-AR unfolded laser diode cavities
Date
2016
Editor(s)
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
Source Title
Proceedings of the International Semiconductor Laser Conference, ISLC 2016
Print ISSN
0899-9406
Electronic ISSN
Publisher
IEEE
Volume
Issue
Pages
Language
English
Type
Journal Title
Journal ISSN
Volume Title
Attention Stats
Usage Stats
0
views
views
16
downloads
downloads
Series
Abstract
We report modeling and experimental results that demonstrate mechanisms limiting the output power of broad area semiconductor lasers. The modeling comprises numerical simulations of the laser cavity with evolution of non-uniform carrier density, photon density, temperature and index. We measure unfolded laser cavities to validate simulation methods and input parameters.