The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage137en_US
dc.citation.issueNumber2en_US
dc.citation.spage132en_US
dc.citation.volumeNumber399en_US
dc.contributor.authorLişesivdin, S. B.en_US
dc.contributor.authorYıldız, A.en_US
dc.contributor.authorAcar, S.en_US
dc.contributor.authorKasap, M.en_US
dc.contributor.authorÖzçelik, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2019-02-08T06:50:30Z
dc.date.available2019-02-08T06:50:30Z
dc.date.issued2007-11-01en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractThe two-dimensional electron gas (2DEG) transport properties of two-step growth undoped Al0.25Ga0.75N/GaN heterostructures with semi-insulating buffer, grown by MOCVD, were investigated in a temperature range of 20–350 K. Using the quantitative mobility spectrum analysis (QMSA) method, it was shown that significant parallel conduction does not occur in worked structures. In-plain growth axis strains are calculated using the total polarization-induced charge density taken as the sheet carrier density measured from the Hall effect. It was found that the calculated strain values are in good agreement with those reported. Influences of the two-step growth parameters such as growth ramp time, the annealing temperature of the GaN nucleation layer on the mobility, and density of the 2DEG are also discussed.en_US
dc.description.provenanceSubmitted by Elsa Bitri (elsabitri@bilkent.edu.tr) on 2019-02-08T06:50:30Z No. of bitstreams: 1 The_effect_of_strain_relaxation_on_electron_transport_in_undoped_Al0.25Ga0.75N_GaN_heterostructures.pdf: 205858 bytes, checksum: 114c13512350d4b141f70f4136ec5924 (MD5)en
dc.description.provenanceMade available in DSpace on 2019-02-08T06:50:30Z (GMT). No. of bitstreams: 1 The_effect_of_strain_relaxation_on_electron_transport_in_undoped_Al0.25Ga0.75N_GaN_heterostructures.pdf: 205858 bytes, checksum: 114c13512350d4b141f70f4136ec5924 (MD5) Previous issue date: 2007-11-01en
dc.identifier.doi10.1016/j.physb.2007.05.036en_US
dc.identifier.eissn1873-2135
dc.identifier.issn0921-4526
dc.identifier.urihttp://hdl.handle.net/11693/49094
dc.language.isoEnglishen_US
dc.publisherElsevier BV * North-Hollanden_US
dc.relation.isversionofhttps://doi.org/10.1016/j.physb.2007.05.036en_US
dc.source.titlePhysica B: Condensed Matteren_US
dc.subjectAlGaN/GaNen_US
dc.subjectHeterostructureen_US
dc.subjectStrainen_US
dc.subjectQMSAen_US
dc.subjectMOCVDen_US
dc.titleThe effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructuresen_US
dc.typeArticleen_US

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