High-speed visible-blind resonant cavity enhanced AlGaN Schottky photodiodes

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.authorBıyıklı, Necmi
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.volumeNumber8,8en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorKartaloglu, T.en_US
dc.contributor.authorAytur, O.en_US
dc.contributor.authorKimukin, I.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T10:28:24Z
dc.date.available2016-02-08T10:28:24Z
dc.date.issued2003en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractWe have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/Al 0.2Ga 0.8N Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devices exhibited resonant peaks with 0.153 A/W and 0.046 A/W responsivity values at 337 nm and 350 nm respectively. Temporal high-speed measurements at 357 nm resulted in fast pulse responses with pulse widths as short as 77 ps. The fastest UV detector had a 3-dB bandwidth of 780 MHz.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:28:24Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2003en
dc.identifier.issn1092-5783
dc.identifier.urihttp://hdl.handle.net/11693/24374
dc.language.isoEnglishen_US
dc.publisherMaterials Research Societyen_US
dc.source.titleMRS Internet Journal of Nitride Semiconductor Researchen_US
dc.subjectTernary alloyen_US
dc.subjectWavelengthen_US
dc.subjectCavity resonatorsen_US
dc.subjectDiffusionen_US
dc.subjectEpitaxial growthen_US
dc.subjectMetallorganic chemical vapor depositionen_US
dc.subjectPhotodetectorsen_US
dc.subjectPhotodiodesen_US
dc.subjectReactive ion etchingen_US
dc.subjectGallium nitrideen_US
dc.titleHigh-speed visible-blind resonant cavity enhanced AlGaN Schottky photodiodesen_US
dc.typeArticleen_US

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