High-speed visible-blind resonant cavity enhanced AlGaN Schottky photodiodes

Date
2003
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Source Title
MRS Internet Journal of Nitride Semiconductor Research
Print ISSN
1092-5783
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Materials Research Society
Volume
8,8
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Language
English
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Abstract

We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/Al 0.2Ga 0.8N Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devices exhibited resonant peaks with 0.153 A/W and 0.046 A/W responsivity values at 337 nm and 350 nm respectively. Temporal high-speed measurements at 357 nm resulted in fast pulse responses with pulse widths as short as 77 ps. The fastest UV detector had a 3-dB bandwidth of 780 MHz.

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