Graphene oxide-doped PEDOT:PSS as hole transport layer in inverted bulk heterojunction solar cell

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buir.contributor.authorÖzcan, Şefika
buir.contributor.authorUyar, Tamer
buir.contributor.orcidUyar, Tamer|0000-0002-3989-4481
dc.citation.epage3584en_US
dc.citation.issueNumber4en_US
dc.citation.spage3576en_US
dc.citation.volumeNumber31en_US
dc.contributor.authorÖzcan, Şefika
dc.contributor.authorErer, M. C.
dc.contributor.authorVempati, S.
dc.contributor.authorUyar, Tamer
dc.contributor.authorToppare, L.
dc.contributor.authorÇırpan, A.
dc.date.accessioned2021-02-19T09:15:42Z
dc.date.available2021-02-19T09:15:42Z
dc.date.issued2020
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractTransparent poly (3,4-ethylenedioxythiophene): poly (styrenesulfonate) (PEDOT:PSS) is widely used hole conducting material in optoelectronic devices. Secondary doping of PEDOT:PSS enables the tunability of its electronic properties. In this work, graphene oxide (GO) was used as a secondary dopant for PEDOT:PSS and the doped materials (composites) were tested for their efficiency as hole transport material in inverted bulk heterojunction (BHJ) solar cell. The composites were studied to unveil the effects of Coulombic interaction between GO and PEDOT:PSS where we note some segregation of PEDOT phase. We found that the GO majorly interacts with PSS through oxygeneous functional groups which promote the detachment of PEDOT from PSS and segregation of PEDOT. Electrochemical properties with and without illumination revealed some photo-induced changes to surface of the samples. Device performances showed about 2.2% efficiency enhancement when GO doping level was 0.25 (v:v) when compared to that of pristine PEDOT:PSS.en_US
dc.identifier.doi10.1007/s10854-020-02906-wen_US
dc.identifier.issn0957-4522
dc.identifier.urihttp://hdl.handle.net/11693/75481
dc.language.isoEnglishen_US
dc.publisherSpringeren_US
dc.relation.isversionofhttps://dx.doi.org/10.1007/s10854-020-02906-wen_US
dc.source.titleJournal of Materials Science: Materials in Electronicsen_US
dc.titleGraphene oxide-doped PEDOT:PSS as hole transport layer in inverted bulk heterojunction solar cellen_US
dc.typeArticleen_US

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