Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition

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buir.contributor.authorBıyıklı, Necmi
dc.citation.epage041511-8en_US
dc.citation.issueNumber4en_US
dc.citation.spage041511-1en_US
dc.citation.volumeNumber34en_US
dc.contributor.authorKizir, S.en_US
dc.contributor.authorHaider, A.en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.date.accessioned2018-04-12T11:09:37Z
dc.date.available2018-04-12T11:09:37Z
dc.date.issued2016en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractGallium nitride (GaN) thin films were grown on Si (100), Si (111), and c-plane sapphire substrates at 200 �C via hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD) using GaEt3 and N2/H2 plasma as group-III and V precursors, respectively. The main aim of the study was to investigate the impact of substrate on the material properties of low-temperature ALD-grown GaN layers. Structural, chemical, and optical characterizations were carried out in order to evaluate and compare film quality of GaN on different substrates. X-ray reflectivity measurements showed film density values of 5.70, 5.74, and 5.54 g/cm3 for GaN grown on Si (100), Si (111), and sapphire, respectively. Grazing incidence x-ray diffraction measurements exhibited hexagonal wurtzite structure in all HCPA-ALD grown GaN samples. However, dominant diffraction peak for GaN films grown on Si and sapphire substrates were detected differently as (002) and (103), respectively. X-ray diffraction gonio scans measured from GaN grown on c-plane sapphire primarily showed (002) orientation. All samples exhibited similar refractive index values (∼2.17 at 632 nm) with 2-3 at. % of oxygen impurity existing within the bulk of the films. The grain size was calculated as ∼9-10 nm for GaN grown on Si (100) and Si (111) samples while it was ∼5 nm for GaN/sapphire sample. Root-mean-square surface roughness values found as 0.68, 0.76, and 1.83 nm for GaN deposited on Si (100), Si (111), and sapphire, respectively. Another significant difference observed between the samples was the film growth per cycle: GaN/sapphire sample showed a considerable higher thickness value when compared with GaN/Si samples, which might be attributed to a possibly more-efficient nitridation and faster nucleation of sapphire surface.en_US
dc.identifier.doi10.1116/1.4953463en_US
dc.identifier.issn0734-2101
dc.identifier.urihttp://hdl.handle.net/11693/37308
dc.language.isoEnglishen_US
dc.publisherAVS Science and Technology Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1116/1.4953463en_US
dc.source.titleJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Filmsen_US
dc.subjectAtomic layer depositionen_US
dc.subjectDepositionen_US
dc.subjectFilm growthen_US
dc.subjectGallium alloysen_US
dc.subjectPulsed laser depositionen_US
dc.subjectRefractive indexen_US
dc.subjectSapphireen_US
dc.subjectSiliconen_US
dc.subjectSubstratesen_US
dc.subjectSurface roughnessen_US
dc.subjectTemperatureen_US
dc.subjectThin filmsen_US
dc.subjectX ray diffractionen_US
dc.subjectZinc sulfideen_US
dc.subjectC-plane sapphire substratesen_US
dc.subjectGallium nitrides (GaN)en_US
dc.subjectGrazing incidence X-ray diffractionen_US
dc.subjectHexagonal wurtzite structureen_US
dc.subjectLow temperature growthen_US
dc.subjectOptical characterizationen_US
dc.subjectPlasma assisted atomic layer depositionsen_US
dc.subjectX-ray reflectivity measurementsen_US
dc.subjectGallium nitrideen_US
dc.titleSubstrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer depositionen_US
dc.typeArticleen_US

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