Confinement of electrons in size-modulated silicon nanowires

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buir.contributor.authorÇıracı, Salim
buir.contributor.orcidÇıracı, Salim|0000-0001-8023-9860
dc.citation.epage075305-6en_US
dc.citation.issueNumber7en_US
dc.citation.spage075305-1en_US
dc.citation.volumeNumber80en_US
dc.contributor.authorCahangirov, S.en_US
dc.contributor.authorÇıracı, Salimen_US
dc.date.accessioned2016-02-08T10:03:02Z
dc.date.available2016-02-08T10:03:02Z
dc.date.issued2009en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractBased on first-principles calculations we showed that superlattices of periodically repeated junctions of hydrogen-saturated silicon nanowire segments having different lengths and diameters form multiple quantum-well structures. The band gap of the superlattice is modulated in real space as its diameter does and results in a band gap in momentum space which is different from constituent nanowires. Specific electronic states can be confined in either narrow or wide regions of superlattice. The type of the band lineup and hence the offsets of valence and conduction bands depend on the orientation of the superlattice as well as on the diameters of the constituent segments. Effects of the SiH vacancy and substitutional impurities on the electronic and magnetic properties have been investigated by carrying out spin-polarized calculations. Substitutional impurities with localized states near band edges can make modulation doping possible. Stability of the superlattice structure was examined by ab initio molecular-dynamics calculations at high temperatures.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:03:02Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2009en
dc.identifier.doi10.1103/PhysRevB.80.075305en_US
dc.identifier.issn10980121
dc.identifier.urihttp://hdl.handle.net/11693/22659
dc.language.isoEnglishen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.80.075305en_US
dc.source.titlePhysical Review B - Condensed Matter and Materials Physicsen_US
dc.titleConfinement of electrons in size-modulated silicon nanowiresen_US
dc.typeArticleen_US

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Institute of Materials Science and Nanotechnology (UNAM)
Department of Physics