An all-ZnO microbolometer for infrared imaging

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buir.contributor.authorOkyay, Ali Kemal
dc.citation.epage249en_US
dc.citation.spage245en_US
dc.citation.volumeNumber67en_US
dc.contributor.authorKesim, Y. E.en_US
dc.contributor.authorBattal, E.en_US
dc.contributor.authorTanrikulu, M. Y.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.date.accessioned2016-02-08T11:00:31Z
dc.date.available2016-02-08T11:00:31Z
dc.date.issued2014en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractMicrobolometers are extensively used for uncooled infrared imaging applications. These imaging units generally employ vanadium oxide or amorphous silicon as the active layer and silicon nitride as the absorber layer. However, using different materials for active and absorber layers increases the fabrication and integration complexity of the pixel structure. In order to reduce fabrication steps and therefore increase the yield and reduce the cost of the imaging arrays, a single layer can be employed both as the absorber and the active material. In this paper, we propose an all-ZnO microbolometer, where atomic layer deposition grown zinc oxide is employed both as the absorber and the active material. Optical constants of ZnO are measured and fed into finite-difference-time-domain simulations where absorption performances of microbolometers with different gap size and ZnO film thicknesses are extracted. Using the results of these optical simulations, thermal simulations are conducted using finite-element-method in order to extract the noise equivalent temperature difference (NETD) and thermal time constant values of several bolometer structures with different gap sizes, arm and film thicknesses. It is shown that the maximum performance of 171 mK can be achieved with a body thickness of 1.1 μm and arm thickness of 50 nm, while the fastest response with a time constant of 0.32 ms can be achieved with a ZnO thickness of 150 nm both in arms and body. © 2014 Elsevier B.V. All rights reserved.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T11:00:31Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2014en
dc.identifier.doi10.1016/j.infrared.2014.07.023en_US
dc.identifier.issn1350-4495
dc.identifier.urihttp://hdl.handle.net/11693/26486
dc.language.isoEnglishen_US
dc.publisherElsevier BVen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.infrared.2014.07.023en_US
dc.source.titleInfrared Physics & Technologyen_US
dc.subjectAtomic layer depositionen_US
dc.subjectMicrobolometersen_US
dc.subjectTransparent conductive oxidesen_US
dc.subjectUncooled infrared imagingen_US
dc.subjectZinc oxideen_US
dc.titleAn all-ZnO microbolometer for infrared imagingen_US
dc.typeArticleen_US

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