Comparative analysis of zinc-blende and wurtzite GaN for full-band polar optical phonon scattering and negative differential conductivity

dc.citation.epage2709en_US
dc.citation.issueNumber17en_US
dc.citation.spage2707en_US
dc.citation.volumeNumber77en_US
dc.contributor.authorBulutay, C.en_US
dc.contributor.authorRidley, B. K.en_US
dc.contributor.authorZakhleniuk, N. A.en_US
dc.date.accessioned2018-04-12T13:50:11Z
dc.date.available2018-04-12T13:50:11Z
dc.date.issued2000en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractFor high-power electronics applications, GaN is a promising semiconductor. Under high electric fields, electrons can reach very high energies where polar optical phonon (POP) emission is the dominant scattering mechanism. So, we undertake a full-hand analysis of POP scattering of conduction-hand electrons based on an empirical pseudopotential band structure. To uncover the directional variations, we compute POP emission rates along high-symmetry directions for the zinc-blende (ZB) crystal phase of GaN. We also compare the results with those of the wurtzite phase. In general, the POP scattering rates in the zinc-blende phase are lower than the wurtzite phase. Our analysis also reveals appreciable directional dependence, with the Γ-L direction of ZB GaN being least vulnerable to POP scattering, characterized by a scattering time of 11 fs. For both crystal phases, we consider the negative differential conductivity possibilities driven by the negative effective mass part of the band structure. According to our estimation, for the ZB phase the onset of this effect requires fields above ∼ 1 MV/cm. © 2000 American Institute of Physics.en_US
dc.identifier.doi10.1063/1.1320020en_US
dc.identifier.eissn1077-3118
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/38180
dc.language.isoEnglishen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.1320020en_US
dc.source.titleApplied Physics Lettersen_US
dc.titleComparative analysis of zinc-blende and wurtzite GaN for full-band polar optical phonon scattering and negative differential conductivityen_US
dc.typeReviewen_US
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