High-speed resonant-cavity-enhanced Schottky photodiodes
buir.contributor.author | Bıyıklı, Necmi | |
buir.contributor.orcid | Özbay, Ekmel|0000-0003-2953-1828 | |
dc.citation.spage | 500 | en_US |
dc.contributor.author | Ata, Erhan P. | en_US |
dc.contributor.author | Bıyıklı, Necmi | en_US |
dc.contributor.author | Demirel, Ekrem | en_US |
dc.contributor.author | Özbay, Ekmel | en_US |
dc.contributor.author | Gökkavas, M. | en_US |
dc.contributor.author | Onat, B. | en_US |
dc.contributor.author | Ünlü, M. S. | en_US |
dc.contributor.author | Tuttle, G. | en_US |
dc.coverage.spatial | San Francisco, CA, USA | en_US |
dc.date.accessioned | 2016-02-08T11:59:36Z | en_US |
dc.date.available | 2016-02-08T11:59:36Z | en_US |
dc.date.issued | 1998 | en_US |
dc.department | Department of Physics | en_US |
dc.description | Date of Conference: 3-8 May 1998 | en_US |
dc.description | Conference Name: Conference on Lasers and Electro-Optics, CLEO 1998 | en_US |
dc.description.abstract | The top-illuminated Schottky photodiodes were fabricated by a microwave-compatible monolithic microfabrication process. Fabrication started with formation of ohmic contacts to n+ layers. Mesa isolation was followed by a Ti-Au interconnect metallization. Following this, a semitransparent Au Schottky metal and a silicon nitride layer was deposited. Finally, a thick Ti-Au layer was deposited to form an air bridge connection between the interconnect and the Schottky metal. The optical properties of the photodiodes were simulated using a transfer matrix method. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T11:59:36Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 1998 | en_US |
dc.identifier.doi | 10.1109/CLEO.1998.676546 | en_US |
dc.identifier.uri | http://hdl.handle.net/11693/27687 | |
dc.language.iso | English | en_US |
dc.publisher | IEEE | en_US |
dc.relation.isversionof | https://doi.org/10.1109/CLEO.1998.676546 | en_US |
dc.source.title | Proceedings of the Conference on Lasers and Electro-Optics, CLEO 1998 | en_US |
dc.subject | Capacitors | en_US |
dc.subject | Fabrication | en_US |
dc.subject | Fourier transforms | en_US |
dc.subject | Light sources | en_US |
dc.subject | Monochromators | en_US |
dc.subject | Ohmic contacts | en_US |
dc.subject | Optical communication | en_US |
dc.subject | Optical interconnects | en_US |
dc.subject | Optical properties | en_US |
dc.subject | Photodetectors | en_US |
dc.subject | Quantum efficiency | en_US |
dc.subject | Resonance | en_US |
dc.subject | Resonant cavity enhanced photodetectors | en_US |
dc.subject | Schottky photodiodes | en_US |
dc.subject | Photodiodes | en_US |
dc.title | High-speed resonant-cavity-enhanced Schottky photodiodes | en_US |
dc.type | Conference Paper | en_US |
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