Surface morphology of Al0.3Ga0.7N/Al2O3-high electron mobility transistor structure

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage644en_US
dc.citation.issueNumber2en_US
dc.citation.spage640en_US
dc.citation.volumeNumber8en_US
dc.contributor.authorÇörekçi, S.en_US
dc.contributor.authorUsanmaz, D.en_US
dc.contributor.authorTekeli, Z.en_US
dc.contributor.authorÖzçelik, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2019-02-06T13:01:40Z
dc.date.available2019-02-06T13:01:40Z
dc.date.issued2008-02en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractWe present surface properties of buffer films (AlN and GaN) and Al0.3Ga0.7N/Al2O3-High Electron Mobility Transistor (HEMT) structures with/without AlN interlayer grown on High Temperature (HT)-AlN buffer/Al2O3 substrate and Al2O3 substrate. We have found that the GaN surface morphology is step-flow in character and the density of dislocations was about 108–109 cm−2. The AFM measurements also exhibited that the presence of atomic steps with large lateral step dimension and the surface of samples was smooth. The lateral step sizes are in the range of 100–250 nm. The typical rms values of HEMT structures were found as 0.27, 0.30, and 0.70 nm. HT-AlN buffer layer can have a significant impact on the surface morphology of Al0.3Ga0.7N/Al2O3-HEMT structures.en_US
dc.identifier.doi10.1166/jnn.2008.A181en_US
dc.identifier.eissn1533-4899
dc.identifier.issn1533-4880
dc.identifier.urihttp://hdl.handle.net/11693/48961
dc.language.isoEnglishen_US
dc.publisherAmerican Scientific Publishersen_US
dc.relation.isversionofhttps://doi.org/10.1166/jnn.2008.A181en_US
dc.source.titleJournal of Nanoscience and Nanotechnologyen_US
dc.subjectMetal organic chemical vapor depositionen_US
dc.subjectAlN interlayeren_US
dc.subjectAtomic force microscopyen_US
dc.subjectAlGan/GaN high electron mobility transistoren_US
dc.titleSurface morphology of Al0.3Ga0.7N/Al2O3-high electron mobility transistor structureen_US
dc.typeArticleen_US

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Department of Electrical and Electronics Engineering
Department of Physics
Institute of Materials Science and Nanotechnology (UNAM)
Nanotechnology Research Center (NANOTAM)