Scattering analysis of ultrathin barrier (<7 nm) GaN‑based heterostructures

Simple item page
buir.contributor.authorArslan, Engin
buir.contributor.authorÖztürk, Mustafa
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage7en_US
dc.citation.issueNumber4en_US
dc.citation.spage1en_US
dc.citation.volumeNumber125en_US
dc.contributor.authorNarin, P.en_US
dc.contributor.authorArslan, Enginen_US
dc.contributor.authorÖztürk, M.en_US
dc.contributor.authorÖztürk, Mustafaen_US
dc.contributor.authorLisesivdin, S. B.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2020-02-19T13:46:15Z
dc.date.available2020-02-19T13:46:15Z
dc.date.issued2019
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractIn this study, two-dimensional electron gas (2DEG) mobility analysis of AlN/GaN and InAlN/GaN structures with ultrathin barrier layers by metal organic chemical vapor deposition (MOCVD) has been performed with Hall efect measurements which is carried out under temperature from 15 to 350 K and a single magnetic feld of 0.5 T. As a result of the scattering analysis made with Matthiessen’s rule, it is shown that while the interface roughness scattering mechanism is dominated on the 2DEG mobility at low temperatures, the 2DEG mobility has been dominated by the polar optical phonon-scattering mechanism at high temperatures. Also, the acoustic phonon-scattering mechanism is efective on the 2DEG mobility at middle temperature. Furthermore, the interface and the quantum well parameters such as deformation potential, quantum well width, and correlation length of the interface are determined for each. As well as experimental measurements, the conduction band energy diagrams of the studied samples have been calculated using one-dimensional (1D) self-consistent Schrödinger–Poisson equations. A 2D quasitriangular quantum well formation has been shown for each studied samples. 2DEG probability density of samples has been investigated.en_US
dc.description.provenanceSubmitted by Evrim Ergin (eergin@bilkent.edu.tr) on 2020-02-19T13:46:15Z No. of bitstreams: 1 Scattering_analysis_of_ultrathin_barrier_7_nm_GaN-based_heterostructures.pdf: 541372 bytes, checksum: 4dc2ada948ed217fcba458073872b16f (MD5)en
dc.description.provenanceMade available in DSpace on 2020-02-19T13:46:15Z (GMT). No. of bitstreams: 1 Scattering_analysis_of_ultrathin_barrier_7_nm_GaN-based_heterostructures.pdf: 541372 bytes, checksum: 4dc2ada948ed217fcba458073872b16f (MD5) Previous issue date: 2019-03en
dc.identifier.doi10.1007/s00339-019-2591-zen_US
dc.identifier.eissn1432-0630
dc.identifier.issn0947-8396
dc.identifier.urihttp://hdl.handle.net/11693/53440
dc.language.isoEnglishen_US
dc.publisherSpringeren_US
dc.relation.isversionofhttps://dx.doi.org/10.1007/s00339-019-2591-zen_US
dc.source.titleApplied Physics A: Materials Science and Processingen_US
dc.titleScattering analysis of ultrathin barrier (<7 nm) GaN‑based heterostructuresen_US
dc.typeArticleen_US

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Scattering_analysis_of_ultrathin_barrier_7_nm_GaN-based_heterostructures.pdf
Size:
528.68 KB
Format:
Adobe Portable Document Format
Description:
Download
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

Scholarly Publications - NANOTAM
Scholarly Publications - Electrical and Electronics Engineering
Scholarly Publications - Physics
Scholarly Publications - UNAM