Methods for probing charging properties of polymeric materials using XPS

buir.contributor.authorSüzer, Şefik
dc.citation.epage379en_US
dc.citation.issueNumberCen_US
dc.citation.spage373en_US
dc.citation.volumeNumber178-179en_US
dc.contributor.authorSezen, H.en_US
dc.contributor.authorErtas, G.en_US
dc.contributor.authorSüzer, Şefiken_US
dc.date.accessioned2016-02-08T09:58:42Z
dc.date.available2016-02-08T09:58:42Z
dc.date.issued2010en_US
dc.departmentDepartment of Chemistryen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractVarious thin polystyrene, PS, and poly(methyl methacrylate), PMMA and PS + PMMA blend films have been examined using the technique of recording X-ray photoelectron spectrum while the sample is subjected to ±10 V d.c. bias, and three different forms of (square-wave (SQW), sinusoidal (SIN) and triangular (TRG)), a.c. pulses. All films exhibit charging shifts as observed in the position of the corresponding C1s peak under d.c. bias. The a.c. pulses convert the single C1s peak to twinned peaks in the case of the square-wave form, and distort severely in the cases of the SIN, and TRG forms, and all three of them exhibit strong frequency dependence. In order to mimic and better understand the behavior of these polymeric materials, an artificial dielectric system consisting of a clean Si-wafer coupled to an external 1 MΩ resistor and 56 nF capacitor is created, and its response to different forms of voltage stimuli, is examined in detail. A simple electrical circuit model is also developed treating the system as consisting of a parallel resistor and a series capacitor. With the help of the model, the response of the artificial system is successfully calculated as judged by comparison with the experimental data. Using one high frequency SQW measurements, the off-set in the charging shift due to the extra low-energy neutralizing electrons is estimated. After correcting the corresponding off-set shifts, the XPS spectra of the three different PS films, one PMMA, and one PS + PMMA blend film are re-examined. As a result of these detailed analysis, there emerges a clear relationship between the thicknesses of the PS films with their charging abilities. In the blend film, PS and PMMA domains are electrically separated, and exhibit different charging shifts, however, the presence of one is felt by the other. Hence, the PS component shifts are larger in the blend, due to the presence of PMMA domains, which has intrinsically a larger Reff, and conversely the PMMA component shifts are smaller due to the presence of PS domains.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T09:58:42Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2010en
dc.identifier.doi10.1016/j.elspec.2009.04.003en_US
dc.identifier.eissn1873-2526
dc.identifier.issn0368-2048
dc.identifier.urihttp://hdl.handle.net/11693/22328
dc.language.isoEnglishen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.elspec.2009.04.003en_US
dc.source.titleJournal of Electron Spectroscopy and Related Phenomenaen_US
dc.subjectChargingen_US
dc.subjectDielectric propertiesen_US
dc.subjectDynamics of chargingen_US
dc.subjectPolymeric matreialsen_US
dc.subjectReseistanceen_US
dc.subjectArtificial dielectricen_US
dc.subjectArtificial systemsen_US
dc.subjectBlend filmsen_US
dc.subjectCharging propertyen_US
dc.subjectElectrical circuit modelsen_US
dc.subjectExperimental dataen_US
dc.subjectFrequency dependenceen_US
dc.subjectHigh frequencyen_US
dc.subjectLow energiesen_US
dc.subjectSeries capacitorsen_US
dc.subjectSi waferen_US
dc.subjectSquare-waveen_US
dc.subjectX ray photoelectron spectraen_US
dc.subjectXPSen_US
dc.subjectXPS spectraen_US
dc.subjectCapacitanceen_US
dc.subjectCapacitorsen_US
dc.subjectDielectric materialsen_US
dc.subjectDielectric propertiesen_US
dc.subjectEstersen_US
dc.subjectMaterials propertiesen_US
dc.subjectPolystyrenesen_US
dc.subjectResistorsen_US
dc.subjectSemiconducting silicon compoundsen_US
dc.subjectSilicon wafersen_US
dc.subjectX ray photoelectron spectroscopyen_US
dc.subjectPolymersen_US
dc.titleMethods for probing charging properties of polymeric materials using XPSen_US
dc.typeArticleen_US

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