Electrical and chemical characterization of chemically passivated silicon surfaces

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buir.contributor.authorSüzer, Şefik
dc.contributor.authorChhabra, B.en_US
dc.contributor.authorSüzer, Şefiken_US
dc.contributor.authorOpila, R. L.en_US
dc.contributor.authorHonsberg, C. B.en_US
dc.coverage.spatialSan Diego, CA, USAen_US
dc.date.accessioned2016-02-08T11:36:24Zen_US
dc.date.available2016-02-08T11:36:24Zen_US
dc.date.issued2008en_US
dc.departmentDepartment of Chemistryen_US
dc.descriptionDate of Conference: 11-16 May 2008en_US
dc.descriptionConference Name: 33rd IEEE Photovoltaic Specialists Conference, IEEE 2008en_US
dc.description.abstractThe surface composition of chemically passivated silicon substrates is investigated using XPS and FTIR techniques. The samples are passivated with methanol, quinhydrone-methanol and iodine-methanol solution after HF treatment. The minority carrier lifetimes of these chemically passivated silicon substrates are also measured. Quinhydrone-methanol solution provides a chemically inert surface and a considerably longer minority carrier lifetime.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T11:36:24Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2008en
dc.identifier.doi10.1109/PVSC.2008.4922673en_US
dc.identifier.issn0160-8371en_US
dc.identifier.urihttp://hdl.handle.net/11693/26807en_US
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/PVSC.2008.4922673en_US
dc.source.titleProceedings of the 33rd IEEE Photovoltaic Specialists Conference, IEEE 2008en_US
dc.subjectChemical characterizationen_US
dc.subjectFtir techniquesen_US
dc.subjectHF treatmenten_US
dc.subjectInert surfacesen_US
dc.subjectMinority carrier lifetimesen_US
dc.subjectSilicon substratesen_US
dc.subjectSilicon surfacesen_US
dc.subjectMethanolen_US
dc.subjectPassivationen_US
dc.titleElectrical and chemical characterization of chemically passivated silicon surfacesen_US
dc.typeConference Paperen_US

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